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TF208TH-5-TL-H

P1-P3P4-P4
TF208TH
No.7698-1/4
Features
• Ultrasmall package facilitates miniaturization in end products.
• Especially suited for use in electret condenser microphone for audio equipments and telephones.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage V
GDO
--20 V
Gate Current I
G
10 mA
Drain Current I
D
1mA
Allowable Power Dissipation P
D
100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C (Value per element)
Ratings
Parameter Symbol Conditions
min typ max
Unit
Gate-to-Drain Breakdown Voltage V
(BR)GDO
I
G
=--100µA --20 V
Cutoff Voltage V
GS(off)
V
DS
=2V, I
D
=1µA --0.1 --1.0 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=2V, V
GS
=0V 140* 350* µA
Forward Transfer Admittance
yfs
V
DS
=2V, V
GS
=0V, f=1kHz 0.5 1.4 mS
Input Capacitance Ciss V
DS
=2V, V
GS
=0V, f=1MHz 5.0 pF
Reverse Transfer Capacitance Crss V
DS
=2V, V
GS
=0V, f=1MHz 1.1 pF
[Ta=25˚C, V
CC
=2.0V, R
L
=2.2kΩ, Cin=5pF, See specified Test Circuit.]
Voltage Gain G
V
V
IN
=10mV, f=1kHz --2.0 dB
Reduced Voltage Characteristic ∆G
VV
V
IN
=10mV, f=1kHz, V
CC
=2.0→1.5V --0.6 --2.0 dB
Frequency Characteristic ∆G
Vf
f=1kHz to 110Hz --1.0 dB
Continued on next page.
* : The TF208TH is classified by I
DSS
as follows : (unit : µA)
Rank B4 B5
I
DSS
140 to 240 210 to 350
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7698A
81005GB MS IM / 33004 TS IM TA-100955
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TF208TH
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
TF208TH
No.7698-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
Total Harmonic Distortion THD V
IN
=30mV, f=1kHz 0.7 %
Output Noise Voltage V
NO
V
IN
=0V, A curve --102 dB
Package Dimensions Test Circuit
unit : mm
7031-001
OSC
5pF
+
33µF
2.2k
Ω
V
CC
=2V
V
CC
=1.5V
V
AB
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Output Impedance
500
400
300
200
100
0
IT04745
--1.0 --0.8 --0.6 --0.4 --0.2 0
I
DSS
=350µA
250µA
150µA
012345
400
300
200
100
0
IT04743
--0.2V
V
DS
=2V
25
°
C
V
GS
=0V
--0.1V
--0.3V
--0.4V
0 0.5 1.0 1.5 2.0
400
300
200
100
0
IT04744
--0.2V
V
GS
=0V
--0.1V
--0.3V
500
400
300
200
100
0
IT04746
--1.0 --0.8 --0.6 --0.4 --0.2 0
V
DS
=2V
Ta=75
°
C
--25
°
C
--0.4V
I
D
-- V
DS
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I
D
-- µA
I
D
-- V
DS
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I
D
-- µA
I
D
-- V
GS
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I
D
-- µA
I
D
-- V
GS
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I
D
-- µA
Top View
Bottom View
0.45
1.4
0.8
1.2
0.2
0.2
0.34
0.07
0.07
1
2
3
0.25
0.2
0.1
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
TF208TH
No.7698-3/4
0 100 200 300 400 500
--1.4
--1.2
--1.0
--0.8
--0.6
--0.2
--0.4
0
∆G
VV
-- I
DSS
Reduced Voltage Characteristic, ∆G
VV
-- dB
IT04752
0
0.2
0.4
0.6
0.8
1.0
1.2
THD
-- I
DSS
Total Harmonic Distortion, THD
-- %
IT04753
V
GS
(off)
-- I
DSS
Cutoff Voltage, V
GS
(off)
-- V
IT04747
∆G
VV
:V
CC
=2V→1.5V
V
IN
=10mV
f=1kHz
I
DSS
: V
DS
=2V
THD
:V
CC
=2V
V
IN
=30V
f=1kHz
I
DSS
: V
DS
=2V
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
0 100 200 300 400 500
V
DS
=2V
I
D
=1µA
0.6
0.8
1.0
1.4
1.2
2.0
1.8
1.6
0 100 200 300 400 500
IT04748
V
DS
=2V
V
GS
=0V
f=1kHz
10
7
5
3
2
2
1.0
1.0 10
23 57
0.1
23 57
Ciss
-- V
DS
Drain-to-Source Voltage, V
DS
-- V Drain-to-Source Voltage, V
DS
-- V
Input Capacitance, Ciss
-- pF
IT04749
1.0
7
5
3
5
3
2
Crss
-- V
DS
Reverse Transfer Capacitance, Crss
-- pF
IT04750
G
V
-- I
DSS
Voltage Gain, G
V
-- dB
IT04751
--4.5
--4.0
--3.5
--2.5
--3.0
--2.0
--1.5
--0.5
--1.0
0 100 200 300 400 500
0 100 200 300 400 500
G
V
: V
CC
=2V
V
IN
=10mV
f=1kHz
R
L
=2.2kΩ
Cin=5pF
I
DSS
: V
DS
=2V
1.0 10
23 57
0.1
23 57
100
120
80
60
40
20
0
0 20 40 60 80 100 120 140 160
P
D
-- Ta
ITR02650
y
fs-- I
DSS
Drain Current, I
DSS
-- µA
Drain Current, I
DSS
-- µA
Forward Transfer Admittance,
y
fs -- mS
Drain Current, I
DSS
-- µA Drain Current, I
DSS
-- µA
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, P
D
-- mW
Drain Current, I
DSS
-- µA
P1-P3P4-P4

TF208TH-5-TL-H

Mfr. #:
Buy TF208TH-5-TL-H
Manufacturer:
ON Semiconductor
Description:
JFET NCH J-FET
Lifecycle:
New from this manufacturer.
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