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TISP4C350H3BJR-S

P1-P3P4-P4
TISP4C115H3BJ THRU TISP4C350H3BJ
LOW CAPACITANCE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4CxxxH3BJ Overvoltage Protector Series
SEPTEMBER 2004 – REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
*RoHS COMPLIANT
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
- Low Off-State Capacitance
Description
Rated for International Surge Wave Shapes
Wave Shape Standard
I
PPSM
A
2/10 GR-1089-CORE 500
10/160 TIA-968-A 200
10/700 ITU-T K.20/21/45 150
10/560 TIA-968-A 100
10/1000 GR-1089-CORE 100
This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning fl ash
disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for
the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-
til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup
as the diverted current subsides.
Please contact your Bourns representative if the protection voltage you require is not listed.
How to Order
Device Package Carrier
Marking
Code
Std. Qty.
TISP4CxxxH3BJ SMB Embossed Tape Reeled TISP4CxxxH3BJR-S 4CxxxH 3000
Insert xxx correspondin
g
to device name.
Order As
SMB Package (Top View)
MD-SMB-004-a
R1 2T
Device Symbol
T
R
SD-TISP4xxx-001-a
...................................................... UL Recognized Component
Device Name
V
DRM
V
V
(BO)
V
TISP4C290H3BJ † 220 290
TISP4C350H3BJ † 275 350
TISP4C145H3BJ † 120 145
TISP4C125H3BJ † 100 125
TISP4C180H3BJ † 145 180
TISP4C165H3BJ 135 165
TISP4C220H3BJ † 180 220
TISP4C250H3BJ † 190 250
TISP4C115H3BJ † 90 115
Rating Symbol Value Unit
Repetitive peak off-state voltage
'4C290H3BJ
'4C350H3BJ
V
DRM
±220
±275
'4C145H3BJ
'4C180H3BJ
±120
'4C165H3BJ ±135
±145
'4C250H3BJ ±190
'4C125H3BJ
'4C220H3BJ
±100
'4C115H3BJ ±90
±180
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
10/160 μs (TIA-968-A, 10/160 μs voltage wave shape)
5/310 μs (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/21/45)
10/560 μs (TIA-968-A, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
I
PPSM
±500
±200
±150
±100
±100
A
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
I
TSM
30
2.1
A
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
SEPTEMBER 2004 – REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-state current V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
μA
V
(BO)
Breakover voltage dv/dt = ±250 V/ms, R
SOURCE
= 300 Ω
'4C290H3BJ
'4C350H3BJ
±290
±350
'4C145H3BJ
'4C180H3BJ
±145
'4C165H3BJ ±165
±180
'4C250H3BJ ±250
'4C125H3BJ
'4C220H3BJ
±125
'4C115H3BJ ±115
±220
V
V
(BO)
Impulse breakover voltage
dv/dt ≤ ±1000 V/μs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±10 A/μs, Linear current ramp,
Maximum ramp value = ±10 A
'4C290H3BJ
'4C350H3BJ
±300
±360
'4C145H3BJ
'4C180H3BJ
'4C290H3BJ
'4C350H3BJ
'4C220H3BJ
'4C250H3BJ
±155
'4C165H3BJ ±175
±190
'4C250H3BJ ±260
'4C125H3BJ
'4C220H3BJ
±135
'4C115H3BJ ±125
±230
V
I
(BO)
Breakover current dv/dt = ±250 V/ms, R
SOURCE
= 300 Ω±600 mA
V
T
On-state voltage I
T
= ±5A, t
w
= 100 μs ±3V
I
H
Holding current I
T
= ±5 A, di/dt = ±30 mA/ms ±150 ±600 mA
C
O
Off-state capacitance f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
40
'4C125H3BJ
'4C115H3BJ
50
'4C145H3BJ
'4C165H3BJ
'4C180H3BJ
45
pF
SEPTEMBER 2004 – REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4CxxxH3BJ Overvoltage Protector Series
Thermal Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
R
θJA
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 4)
113
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
50
NOTE: 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Measurement Information
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TRM
I
PPSM
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TRM
I
PPSM
-i
Quadrant III
Switching
Characteristic
I
TSM
I
TSM
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
PM-TISP4xxx-001-a
P1-P3P4-P4

TISP4C350H3BJR-S

Mfr. #:
Buy TISP4C350H3BJR-S
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) 275V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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