CNY17G-4 Datasheet CNY17G-1, CNY17G-2, CNY17G-3 | P4-P6

CNY17., CNY17G

www.vishay.com

Vishay Semiconductors

Alternative Device Available, Use CNY17

Rev. 1.6, 17-Feb-14

4

Document Number: 81863

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

Fig. 1 - Linear Operation (without Saturation)

Fig. 1 - Switching Operation (with Saturation)

Fig. 2 - Current Transfer Ratio vs. Diode Current

Fig. 3 - Current Transfer Ratio vs. Diode Current

Fig. 4 - Current Transfer Ratio vs. Diode Current

Fig. 5 - Current Transfer Ratio vs. Diode Current

icny17_01

R

L

= 75 Ω

V

CC

= 5 V

I

C

47 Ω

I

F

I

F

1 kΩ

V

CC

= 5 V

47 Ω

icny17_02

(%)

1000

1

2

3

4

100

10

1

0.1 101

I

F

(mA)

icny17_03

(T

A

= - 25 °C, V

CE

= 5 V)

I

C

/I

F

= f (I

F

)

I

C

I

F

1

2

3

4

icny17_04

(%)

1000

100

10

1

0.1 101

I

F

(mA)

(T

A

= 0 °C, V

CE

= 5 V)

I

C

/I

F

= f (I

F

)

I

C

I

F

1

2

3

4

icny17_05

(%)

1000

100

10

1

0.1 101

I

F

(mA)

(T

A

= 25 °C, V

CE

= 5 V)

I

C

/I

F

= f (I

F

)

I

C

I

F

1

2

3

4

icny17_06

(%)

1000

100

10

1

0.1 101

I

F

(mA)

(T

A

= 50 °C, V

CE

= 5 V)

I

C

/I

F

= f (I

F

)

I

C

I

F

CNY17., CNY17G

www.vishay.com

Vishay Semiconductors

Alternative Device Available, Use CNY17

Rev. 1.6, 17-Feb-14

5

Document Number: 81863

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 6 - Current Transfer Ratio vs. Diode Current

Fig. 7 - Current Transfer Ratio (CTR) vs. Temperature

Fig. 8 - Transistor Characteristics

Fig. 9 - Output Characteristics

Fig. 10 - Forward Voltage vs. Forward Current

Fig. 11 - Leakage Current vs. Ambient Temperature

1

2

3

4

icny17_07

(%)

1000

100

10

1

0.1 101

I

F

(mA)

(T

A

= 75 °C, V

CE

= 5 V)

I

C

/I

F

= f (I

F

)

I

C

I

F

- 25 7525050

T

A

(°C)

icny17_08

1

2

3

4

(%)

1000

100

10

(I

F

= 10 mA, V

CE

= 5 V)

I

C

/I

F

= f (T)

I

C

I

F

30

25

10

20

15

0

015105

5

I

C

(mA)

V

CE

(V)

icny17_09

I

B

= 10 µA

I

B

= 15 µA

I

B

= 20 µA

I

B

= 40 µA

I

B

= 2 µA

I

B

= 5 µA

I

C

= f (V

CE

)

I

F

= 0

40

30

10

20

0

015105

I

C

V

CE

(V)

icny17_10

I

F

= 14 mA

I

F

= 12 mA

I

F

= 10 mA

I

F

= 7 mA

I

F

= 5 mA

I

F

= 2 mAI

F

= 1 mA

I

C

= f (V

CE

)

1.2

1.1

1.0

0.9

0.1 10 1001

V

F

(V)

I

F

(mA)

icny17_11

V

F

= f (I

F

)

25 °C

50 °C

75 °C

1

0.1

0.01

0.001

0°C25 50 75 100

I

CEO

(µA)

T

A

icny17_12

V

CE

= 12 V

V

CE

= 35 V

I

CEO

= f (V,T)

(I

F

= 0)

CNY17., CNY17G

www.vishay.com

Vishay Semiconductors

Alternative Device Available, Use CNY17

Rev. 1.6, 17-Feb-14

6

Document Number: 81863

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 12 - Saturation Voltage vs.

Collector Current and Modulation Depth CNY17-1

Fig. 13 - Saturation Voltage vs.

Collector Current and Modulation Depth CNY17-2

Fig. 14 - Saturation Voltage vs.

Collector Current and Modulation Depth CNY17-3

Fig. 15 - Saturation Voltage vs.

Collector Current and Modulation Depth CNY17-4

Fig. 16 - Permissible Power Dissipation for Transistor and Diode

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1 10 100

V

CE sat

I

C

(mA)

icny17_13

I

F

= 3 x I

C

V

CEsat

= f (I

C

)

0

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1 10 100

V

CE sat

(V)

I

C

(mA)

icny17_14

I

F

= 2 x I

C

I

F

= 3 x I

C

V

CEsat

= f (I

C

)

0

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

1 10 100

V

CE sat

(V)

I

C

(mA)

icny17_15

I

F

= 2 x I

C

I

F

= 3 x I

C

I

F

= I

C

V

CEsat

= f (I

C

)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

1 10 100

V

CE sat

(V)

I

C

(mA)

icny17_16

I

F

= 2 x I

C

I

F

= 3 x I

C

I

F

= I

C

V

CEsat

= f (I

C

)

0

50

100

150

200

0 50 1007525

P

tot

(mW)

T

A

(°C)

icny17_18

P

tot

= f (T

A

)

Transistor

Diode

CNY17G-4

CNY17G-4

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