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VN2222LL

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 3
1 Publication Order Number:
VN2222LL/D
VN2222LL
Preferred Device
Small Signal MOSFET
150 mAmps, 60 Volts
N−Channel TO−92
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
60 Vdc
Drain−Gate Voltage (R
GS
= 1.0 M) V
DGR
60 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 s)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
− Continuous
− Pulsed
I
D
I
DM
150
1000
mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
400
3.2
mW
mW/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
JA
312.5 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
T
L
300 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
VN22
22LL
AYWW
D
G
TO−92
CASE 29
STYLE 22
N−Channel
S
1
2
3
1
Source
3
Drain
2
Gate
150 mA, 60 V
R
DS(on)
= 7.5
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
A = Assembly Location
Y = Year
WW = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
http://onsemi.com
VN2222LL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 Adc)
V
(BR)DSS
60 − Vdc
Zero Gate Voltage Drain Current
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125°C)
I
DSS
−
−
10
500
Adc
Gate−Body Leakage Current, Forward
(V
GSF
= 30 Vdc, V
DS
= 0)
I
GSSF
− −100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.6 2.5 Vdc
Static Drain−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 10 Vdc, I
D
= 0.5 Vdc, T
C
= 125°C)
r
DS(on)
−
−
7.5
13.5
Drain−Source On−Voltage
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
V
DS(on)
−
−
1.5
3.75
Vdc
On−State Drain Current
(V
GS
= 10 Vdc, V
DS
≥ 2.0 V
DS(on)
)
I
D(on)
750 − mA
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 500 mAdc)
g
fs
100 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0
C
iss
− 60
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz
)
C
oss
− 25
Reverse Transfer Capacitance
f
=
1
.
0
MHz)
C
rss
− 5.0
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
(V
DD
= 15 Vdc, I
D
= 600 mA,
t
on
− 10
ns
Turn−Off Delay Time
(V
DD
15
Vdc
,
I
D
600
mA
,
R
gen
= 25 , R
L
= 23 )
t
off
− 10
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
†
VN2222LL TO−92 1000 Unit / Box
VN2222LLG TO−92
(Pb−Free)
1000 Unit / Box
VN2222LLRL TO−92 1000 Unit / Box
VN2222LLRLRA TO−92 2000 Tape & Reel
VN2222LLRLRAG TO−92
(Pb−Free)
2000 Tape & Reel
VN2222LLRLRM TO−92 2000 Unit / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
VN2222LL
http://onsemi.com
3
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
0.6
0.4
0.2
0.8
1.2
1
01234
5
1.6
1.4
678
910
Figure 1. Ohmic Region
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
01234
5
678
910
1.8
2
0.6
0.4
0.2
0.8
1
T, TEMPERATURE (°C) T, TEMPERATURE (°C)
0.4
1
0.8
0.6
1.2
1.6
1.4
, STATIC DRAIN−SOURCE ON−RESISTANCE
DS(on)
r
−60 −20 +20
2
1.8
+60 +100
+140
2.2
2.4
−60 −20 0 +20 +60 +100
+140
0.7
0.85
0.8
0.75
0.9
1
0.95
1.1
1.05
1.15
1.2
(NORMALIZED)
, THRESHOLD VOLTAGE (NORMALIZED)
GS(th)
V
Figure 2. Transfer Characteristics
Figure 3. Temperature versus Static
Drain−Source On−Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
T
A
= 25°C
V
GS
= 10 V
9 V
8 V
7 V
6 V
5 V
4 V
3 V
V
DS
= 10 V
25°C
125°C
−55 °C
V
GS
= 10 V
I
D
= 200 mA
V
DS
= V
GS
I
D
= 1 mA
P1-P3P4-P4

VN2222LL

Mfr. #:
Buy VN2222LL
Manufacturer:
Diodes Incorporated
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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