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V15P45HM3_A/H

P1-P3P4-P5
V15P45-M3, V15P45HM3
www.vishay.com
Vishay General Semiconductor
Revision: 06-May-15
1
Document Number: 89342
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.31 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
RRM
45 V
I
FSM
210 A
V
F
at I
F
= 15 A 0.42 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variations Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2
Cathode
K
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V15P45 UNIT
Device marking code V1545
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current
I
F
(1)
15
A
I
F
(2)
4.8
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
210 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V15P45-M3, V15P45HM3
www.vishay.com
Vishay General Semiconductor
Revision: 06-May-15
2
Document Number: 89342
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Notes
(1)
Mounted on 30 mm x 30 mm aluminum PCB; T
M
measured
at the terminal of cathode band (R
JM
= 4 °C/W)
(2)
Free air, mounted on recommended copper pad area
(R
JA
= 75 °C/W)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.40 -
V
I
F
= 7.5 A 0.45 -
I
F
= 15 A 0.49 0.58
I
F
= 5.0 A
T
A
= 125 °C
0.31 -
I
F
= 7.5 A 0.34 -
I
F
= 15 A 0.42 0.51
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
- 1500 μA
T
A
= 125 °C 15 50 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V15P45 UNIT
Typical thermal resistance
R
JA
(1)
75
°C/W
R
JM
(2)
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V15P45-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V15P45-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
V15P45HM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
V15P45HM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
V15P45HM3_A/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
V15P45HM3_A/I
(1)
0.10 I 6500 13" diameter plastic tape and reel
T
M
- Mount Temperature (°C)
18
4
0
0 75 150
DC Forward Current (A)
25 10050 125
8
2
T
M
= 116 °C
(1)
6
10
T
A
= 25 °C
(2)
16
14
12
T
L
Measured
at the Cathode Band Terminal
V15P45-M3, V15P45HM3
www.vishay.com
Vishay General Semiconductor
Revision: 06-May-15
3
Document Number: 89342
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance Per Diode
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
Average Forward Current (A)
11
6
0
06 18
Average Power Loss (W)
414
1
4
D = t
p
/T t
p
T
5
D = 0.8
3
102
2
81612
10
8
9
7
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
100
0.1
00.6
Instantaneous Forward Current (A)
0.1 0.5
1
0.2
T
A
= 100 °C
10
0.3 0.4
Percent of Rated Peak Reverse Voltage (%)
100
0.001
20 40 100
Instantaneous Reverse Current (mA)
50
1
30 60
10
9070
0.1
0.01
80
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
10 000
100
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
0.1 100110
1000
t - Pulse Duration (s)
100
0.1
0.01 10 100
Transient Thermal Impedance (°C/W)
0.1 1
10
Junction to Ambient
1
P1-P3P4-P5

V15P45HM3_A/H

Mfr. #:
Buy V15P45HM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers TMBS 45V Vrrm eSMP AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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