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TSDP34156

P1-P3P4-P6P7-P7
TSDP341.., TSDP343..
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 22-Aug-14
1
Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR Receiver Modules for Data Transmission
MECHANICAL DATA
Pinning for TSDP341.., TSDP343..:
1 = OUT, 2 = GND, 3 = V
S
FEATURES
• Very low supply current
• Continuous data rates up to 7777 bps
• Range up to 32 m
• Photo detector and preamplifier in one package
• Internal filter tuned to 38.4 kHz for 4800 bps or
57.6 kHz for 9600 bps
• Shielding against EMI
• Supply voltage: 2.5 V to 5.5 V
• Immunity against ambient light
• Insensitive to supply voltage ripple and noise
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
These products are miniaturized receivers for low speed
infrared data transmission. A PIN diode and a preamplifier
are assembled on a lead frame, the epoxy package contains
an IR filter.
The demodulated output can be directly connected to a
UART or a microprocessor. The TSDP34138 may be used
for continuous reception of data according to RS-232 at
4800 bps in noise free environments. Higher data rate
RS-232 may require data monitoring of gain levels. Non
RS-232 codings may be used to achieve continuous
average data rates up to 7800 bps in noisy ambients.
This component has not been qualified according to
automotive specifications.
BLOCK DIAGRAM APPLICATION CIRCUIT
16672
1
2
3
PARTS TABLE
AGC AGC1 FOR LOW NOISE ENVIRONMENTS AGC3 FOR NOISY ENVIRONMENTS
Carrier
frequency
38.4 kHz TSDP34138 TSDP34338
57.6 kHz TSDP34156 TSDP34356
Package Mold
Pinning 1 = OUT, 2 = GND, 3 = V
S
1 = OUT, 2 = GND, 3 = V
S
Dimensions (mm) 6.0 W x 6.95 H x 5.6 D
Mounting Leaded
Application Data transmission
30 kΩ
2
3
1
Demo-
pass
AGCInput
PIN
Band
dulator
Control circuit
16833-13
C
1
IR receiver
GND
Circuit
µC
R
1
+ V
S
GND
Transmitter
with
TSALxxxx
V
S
V
O
17170_5
OUT
R
1
and C
1
are recommended for protection against EOS.
Components should be in the range of 33 Ω < R
1
< 1 kΩ,
C
1
> 0.1 µF.
TSDP341.., TSDP343..
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 22-Aug-14
2
Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Supply voltage V
S
-0.3 to +6 V
Supply current I
S
3mA
Output voltage V
O
-0.3 to (V
S
+ 0.3) V
Output current I
O
5mA
Junction temperature T
j
100 °C
Storage temperature range T
stg
-25 to +85 °C
Operating temperature range T
amb
-25 to +85 °C
Power consumption T
amb
≤ 85 °C P
tot
10 mW
Soldering temperature t ≤ 10 s, 1 mm from case T
sd
260 °C
ELECTRICAL AND OPTICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Supply current
E
v
= 0, V
S
= 3.3 V I
SD
0.27 0.35 0.45 mA
E
v
= 40 klx, sunlight I
SH
0.45 mA
Supply voltage V
S
2.5 5.5 V
Transmission distance
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 150 mA
d35m
Output voltage low
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
V
OSL
100 mV
Minimum irradiance
Pulse width tolerance:
t
pi
- 1/f
0
< t
po
< t
pi
+ 4/f
0
,
test signal see fig. 1
E
e min.
0.15 0.30 mW/m
2
Maximum irradiance
t
pi
- 1/f
0
< t
po
< t
pi
+ 4/f
0
,
test signal see fig. 1
E
e max.
30 W/m
2
Maximum pulse width E
e min.
> 10 mW/m
2
, t
pi
= 8/f
0
t
po max.
11.5/f
0
s
Directivity
Angle of half transmission
distance
ϕ
1/2
± 45 deg
E
e
T
t
pi
*)
t
V
O
V
OH
V
OL
t
po
2)
t
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, N = 6 pulses, f = f
0
, t = 10 ms)
Output Signal
t
d
1)
1)
3/f
0
< t
d
< 9/f
0
2)
t
pi
- 1/f
0
< t
po
< t
pi
+ 4/f
0
*) t
pi
≥ 6/f
0
is recommended for optimal function
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.1 10 1000 100 000
t
po
-Output Pulse Width (ms)
E
e
- Irradiance (mW/m
2
)
Output pulse width
Input burst length
Optical test signal, λ = 940 nm,
f = 38 kHz, N = 8 carrier cycles
TSDP341.., TSDP343..
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 22-Aug-14
3
Document Number: 82667
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Output Function
Fig. 4 - Output Pulse Diagram
Fig. 5 - Frequency Dependence of Responsivity
Fig. 6 - Sensitivity in Bright Ambient
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
Fig. 8 - Maximum Envelope Duty Cycle vs. Burst Length
E
e
t
V
O
V
OH
V
OL
t
210 µs 210 µs
t = 60 ms
t
on
t
off
Optical Test Signal
Output Signal, (see fig. 4)
0
0.1
0.2
0.3
0.4
0.1 10 1000 100 000
t
on
, t
off
-Output Pulse Width (ms)
E
e
- Irradiance (mW/m
2
)
t
on
t
off
λ = 940 nm, f = 38 kHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f
0
- Relative Frequency
16926
f (3 dB) = f
0
/7
E
e min.
/E
e
- Rel. Responsivity
f = f
0
± 5 %
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.1 1 10 100
E
e min.
-Threshold Irradiance (mW/m
2
)
E
e
- Ambient DC Irradiance (W/m
2
)
Wavelength of ambient
illumination: λ = 950 nm
Correlation with
ambient light sources:
10 W/m
2
= 1.4 klx
(Std. ilum. A, T = 2855 K)
10 W/m
2
= 8.2 klx
(Daylight, T = 5900 K)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1 10 100 1000
E
e min.
-Threshold Irradiance (mW/m
2
)
ΔV
S RMS
- AC Voltage on DC Supply Voltage (mV)
f = f
0
f = 30 kHz
f = 10 kHz
f = 100 Hz
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 20 40 60 80 100 120
Burst Length (Number of Cycles/Burst)
Max. Envelope Duty Cycle
f = 38 kHz,
E
e
= 2 mW/m²
TSDP343..
TSDP341..
P1-P3P4-P6P7-P7

TSDP34156

Mfr. #:
Buy TSDP34156
Manufacturer:
Vishay Semiconductors
Description:
Infrared Receivers 2.5-5.5V 57.6kHz
Lifecycle:
New from this manufacturer.
Delivery:
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