TS13002ACT B0G

TS13002A

High Voltage NPN Transistor

Document Number:

DS_P0000252 1

Version: F15

TO

-

92

PRODUCT SUMMARY

BV

CEO

400V

BV

CBO

700V

I

C

0.3A

V

CE(SAT)

1.5V @ I

C

/ I

B

= 200mA / 20mA

Features

● High Voltage

● High Speed Switching

Block Diagram

Structure

● Silicon Triple Diffused Type

● NPN Silicon Transistor

Ordering Information

Part No. Package

Packing

TS13002ACT B0G TO-92 1Kpcs / Bulk

TS13002ACT A3G TO-92 2Kpcs / Ammo

Note: “G” denote for Green Product

Absolute Maximum Rating

(Ta = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Collector-Base Voltage V

CBO

700V V

Collector

-

Emitter Voltage

V

CEO

400V

V

Emitter-Base Voltage V

EBO

9 V

Collector Current

DC

I

C

0.3

A

Pulse 0.5

Collector Power Dissipation

P

D

0.6

W

Operating Junction Temperature T

J

+150 °C

Operating Junction and Storage Temperature Range T

STG

- 55 to +150 °C

Thermal Performance

Parameter Symbol Limit Unit

Junction to Ambient Thermal Resistance RӨ

JA

122 °C/W

Pin

Definition

:

1. Emitter

2. Collector

3. Base

TS13002A

High Voltage NPN Transistor

Document Number:

DS_P0000252 2

Version: F15

Electrical Specifications

(Ta = 25°C unless otherwise noted)

Parameter Conditions Symbol Min Typ Max Unit

Static

Collector-Base Voltage I

C

= 1mA, I

B

= 0 BV

CBO

700 -- -- V

Collector-Emitter Breakdown Voltage I

C

= 10mA, I

E

= 0 BV

CEO

400 -- -- V

Emitter-Base Breakdown Voltage I

E

= 1mA, I

C

= 0 BV

EBO

9 -- -- V

Collector Cutoff Current V

CB

= 700V, I

E

= 0 I

CBO

-- -- 1 uA

Emitter Cutoff Current V

EB

= 7V, I

C

= 0 I

EBO

-- -- 1 uA

Collector-Emitter Saturation Voltage

I

C

/ I

B

= 50mA / 10mA

I

C

/ I

B

= 100mA / 10mA

I

C

/ I

B

= 200mA / 20mA

V

CE(SAT)1

V

CE(SAT)2

V

CE(SAT)3

--

--

--

0.2

0.45

1

0.4

1

1.5

V

Base-Emitter Saturation Voltage

I

C

/ I

B

= 50mA / 10mA

I

C

/ I

B

= 100mA / 10mA

V

BE(SAT)1

V

BE(SAT)2

--

--

--

--

1

1.2

V

DC Current Gain

V

CE

= 10V, I

C

= 10mA

V

CE

= 10V, I

C

= 100mA

V

CE

= 10V, I

C

= 280mA

h

FE

1

h

FE

2

h

FE

3

15

25

12

--

--

--

40

40

24

Dynamic

Frequency V

CE

= 10V, I

C

= 0.1A f

T

4 -- -- MHz

Output Capacitance V

CB

= 10V, f = 0.1MHz Cob -- 21 -- pF

Resistive Load Switching Time (Ratings)

Rise Time

V

CC

= 125V, I

C

= 100m

A,

I

B1

= I

B2

= 20mA,

t

p

= 25uS

Duty Cycle ≤1%

t

r

-- 1.1 -- uS

Storage Time t

STG

-- 2 4 uS

Fall Time t

f

-- 0.2 0.7 uS

Note : pulse test: pulse width ≤ 5mS, duty cycle ≤10%

TS13002A

High Voltage NPN Transistor

Document Number:

DS_P0000252 3

Version: F15

Electrical Characteristics Curve

(Ta = 25°C, unless otherwise noted)

Figure 1. Static Characteristics

Figure 2. DC Current Gain

Figure 3. V

CE(SAT)

v.s. V

BE(SAT

Figure 4. Power Derating

Figure 5. Reverse Bias SOA

Figure 6. Safety Operating Area

TS13002ACT B0G

Mfr. #:

Buy TS13002ACT B0G

Manufacturer:

Taiwan Semiconductor

Description:

Bipolar Transistors - BJT TO-92, 700V 0.3A NPN Bplr Trans

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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