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SMBD914E6327HTSA1

P1-P3P4-P6
2007-03-28
1
SMBD914/MMBD914...
Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
SMBD914/MMBD914
!
Type Package Configuration Marking
SMBD914/MMBD914 SOT23 single s5D
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
100 V
Peak reverse voltage V
RM
100
Forward current I
F
250 mA
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
I
FSM
4.5
0.5
A
Total power dissipation
T
S
≤ 54°C
P
tot
370 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
SMBD914/MMBD914
R
thJS
≤ 260
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-03-28
2
SMBD914/MMBD914...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
100 - - V
Reverse current
V
R
= 20 V
V
R
= 75 V
V
R
= 20 V, T
A
= 150 °C
V
R
= 75 V, T
A
= 150 °C
I
R
-
-
-
-
-
-
-
-
0.025
0.1
30
50
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
mV
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 2 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA ,
R
L
= 100 Ω
t
rr
- - 4 ns
Test circuit for reverse recovery time
EHN00019
Ι
F
D.U.T.
Oscillograph
Pulse generator: t
p
= 100ns, D = 0.05, t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω, t
r
= 0.35ns, C ≤ 1pF
2007-03-28
3
SMBD914/MMBD914...
Reverse current I
R
= ƒ (T
A
)
V
R
= Parameter
0 25 50 75 100
°C
150
T
A
1
10
2
10
3
10
4
10
5
10
nA
I
R
70 V
25 V
Forward Voltage V
F
= ƒ (T
A
)
I
F
= Parameter
0
0.5
1.0
0 50 100 150
SMBD 914 EHB00114
V
T
A
V
F
˚C
Ι
F
= 100 mA
10 mA
1 mA
0.1 mA
Forward current I
F
= ƒ (V
F
)
T
A
= 25°C
0
0
EHB00137SMBD 7000
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Forward current I
F
= ƒ (T
S
)
SMBD914/MMBD914
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
50
100
150
200
mA
300
I
F
P1-P3P4-P6

SMBD914E6327HTSA1

Mfr. #:
Buy SMBD914E6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching AF DIODE 100V 0.25A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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