NTMFS4982NF
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
2520151050
0
2000
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
10000
0.60.50.40.30.10
0
1
2
5
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
100101
0.01
0.1
1
10
150125100755025
0
10
60
100
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
Q
T
V
DD
= 15 V
I
D
= 10 A
V
GS
= 10 V
t
d(on)
t
r
t
f
T
J
= 25°C
V
GS
= 0 V
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
I
D
= 50 A
5000
40
80
1000
3000
4000
120
0.7
0
2
5
7
9
11
0 203040 6070 90
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 25 A
6
8
10
10 ms
5010
6000
7000
1000
8000
1
3
6
8
10
4
Q
gs
Q
gd
t
d(off)
80
1000
0.2
3
4
7
9
100
20
30
50
70
90
110
130
0.1
