IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGI48N60C3 IXGA48N60C3
IXGP48N60C3 IXGH48N60C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 30A, V
CE
= 10V, Note 1 20 30 S
C
ies
1960 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 207 pF
C
res
66 pF
Q
g
77 nC
Q
ge
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
16 nC
Q
gc
32 nC
t
d(on)
19 ns
t
ri
26 ns
E
on
0.41 mJ
t
d(off)
60 100 ns
t
fi
38 ns
E
off
0.23 0.42 mJ
t
d(on)
19 ns
t
ri
26 ns
E
on
0.65 mJ
t
d(off)
92 ns
t
fi
95 ns
E
off
0.57 mJ
R
thJC
0.42 °C/W
R
thCS
(TO-247) 0.21 °C/W
(TO-220) 0.50 °C/W
Inductive Load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 3Ω
Note 2
Inductive Load, T
J
= 125°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 3Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
TO-263 Lead (IXGI)
G = Gate D = Collector
S = Emitter Tab = Collector
TO-247 (IXGH)
G
E
C
C (Tab)
TO-263 AA (IXGA)
G
E
G
C
E
TO-220AB (IXGP)
C (Tab)
C (Tab)
C
E
G
C (Tab)