IXGP48N60C3

© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 75 A
I
C110
T
C
= 110°C 48 A
I
CM
T
C
= 25°C, 1ms 250 A
I
A
T
C
= 25°C 30 A
E
AS
T
C
= 25°C 300 mJ
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 3Ω I
CM
= 100 A
(RBSOA) Clamped Inductive Load V
CE
V
CES
P
C
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 Seconds 260 °C
F
C
Mounting Force (TO-263 Lead) 10.65 / 2.5..14.6 N/lb.
M
d
Mounting Torque (TO-247&TO-220) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-263 Lead 2.8 g
TO-220 3.0 g
TO-247 6.0 g
DS99953B(06/11)
IXGI48N60C3
IXGA48N60C3
IXGP48N60C3
IXGH48N60C3
V
CES
= 600V
I
C110
= 48A
V
CE(sat)
2.5V
t
fi(typ)
= 38ns
GenX3
TM
600V IGBTs
High-Speed PT IGBTs for
40-100kHz Switching
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Avalanche Rated
z
Fast Switching
z
International Standard Packages
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 25 μA
T
J
= 125°C 250 μA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 30A, V
GE
= 15V, Note 1 2.3 2.5 V
T
J
= 125°C 1.8 V
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGI48N60C3 IXGA48N60C3
IXGP48N60C3 IXGH48N60C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 30A, V
CE
= 10V, Note 1 20 30 S
C
ies
1960 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 207 pF
C
res
66 pF
Q
g
77 nC
Q
ge
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
16 nC
Q
gc
32 nC
t
d(on)
19 ns
t
ri
26 ns
E
on
0.41 mJ
t
d(off)
60 100 ns
t
fi
38 ns
E
off
0.23 0.42 mJ
t
d(on)
19 ns
t
ri
26 ns
E
on
0.65 mJ
t
d(off)
92 ns
t
fi
95 ns
E
off
0.57 mJ
R
thJC
0.42 °C/W
R
thCS
(TO-247) 0.21 °C/W
(TO-220) 0.50 °C/W
Inductive Load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 3Ω
Note 2
Inductive Load, T
J
= 125°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 3Ω
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
TO-263 Lead (IXGI)
G = Gate D = Collector
S = Emitter Tab = Collector
TO-247 (IXGH)
G
E
C
C (Tab)
TO-263 AA (IXGA)
G
E
G
C
E
TO-220AB (IXGP)
C (Tab)
C (Tab)
C
E
G
C (Tab)
© 2011 IXYS CORPORATION, All Rights Reserved
IXGI48N60C3 IXGA48N60C3
IXGP48N60C3 IXGH48N60C3
P
TO-247Outline
Pins: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
Pins: 1 - Gate 2 - Collector
3 - Emitter
TO-220 Outline
Leaded 263 Outline
Pins: 1 - Gate 2,4 - Collector
3 - Emitter
TO-263 Outline
Pins: 1 - Gate 2,4 - Collector
3 - Emitter

IXGP48N60C3

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Transistors 75Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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