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NL17SH14P5T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1 Publication Order Number:
NL17SH14/D
NL17SH14
Single Schmitt-Trigger
Inverter
The NL17SH14 is a single gate CMOS Schmitt−trigger inverter
fabricated with silicon gate CMOS technology. The internal circuit is
composed of three stages, including a buffer output which provides
high noise immunity and stable output. The NL17SH14 input structure
provides protection when voltages up to 7 V are applied, regardless of
the supply voltage. This allows the NL17SH14 to be used to interface
5 V circuits to 3 V circuits.
The NL17SH14 can be used to enhance noise immunity or to square
up slowly changing waveforms.
Features
• High Speed: t
PD
= 4.0 ns (Typ) at V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 1.0 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 101
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Pinout
V
CC
IN A
GND
OUT Y
NC
IN A
OUT Y
Figure 2. Logic Symbol
1
2
3
4
5
1
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ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
PIN ASSIGNMENT
1
2
3NC
IN A
GND
4
5V
CC
OUT Y
MARKING
DIAGRAM
SOT−953
CASE 527AE
R = Specific Device Code
M = Month Code
R M
1
FUNCTION TABLE
L
H
Input A Output Y
H
L
NL17SH14
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to V
CC
+ 0.5 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND, V
OUT
> V
CC
±20 mA
I
OUT
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>300
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0.0 5.5 V
V
OUT
Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range −55 +125 °C
Dt / DV
Input Transition Rise or Fail Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
No Limit
No Limit
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130°C
T
J
= 120°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
NL17SH14
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= 255C T
A
v 855C *555C to 1255C
Unit
Min Typ Max Min Max Min Max
V
T+
Positive Threshold
Voltage
3.0
4.5
5.5
2.0
3.0
3.6
2.2
3.15
3.85
2.2
3.15
3.85
2.2
3.15
3.85
V
V
T−
Negative Threshold
Voltage
3.0
4.5
5.5
0.9
1.35
1.65
1.5
2.3
2.9
0.9
1.35
1.65
0.9
1.35
1.65
V
V
H
Hysteresis Voltage 3.0
4.5
5.5
0.3
0.4
0.5
0.57
0.67
0.74
1.2
1.4
1.6
0.3
0.4
0.5
1.2
1.4
1.6
0.3
0.4
0.5
1.2
1.4
1.6
V
V
OH
High−Level
Output Voltage
V
IN
≤ V
Tmin
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
≤ V
Tmin
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Low−Level
Output Voltage
V
IN
≥ V
Tmax
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
≥ V
Tmax
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to
5.5
$0.1 $1.0 $1.0
mA
I
CC
Quiescent Supply
Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol Parameter
V
CC
(V)
Test
Conditions
T
A
= 255C T
A
v 855C *555C to 1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay,
A to Y
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
7.0
8.5
12.8
16.3
1.0
1.0
15.0
18.5
1.0
1.0
17.0
20.5
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
4.0
5.5
8.6
10.6
1.0
1.0
10.0
12.0
1.0
1.0
11.5
13.5
C
IN
Input Capacitance 5.0 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 6)
Typical @ 25°C, V
CC
= 5.0 V
7.0 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P5

NL17SH14P5T5G

Mfr. #:
Buy NL17SH14P5T5G
Manufacturer:
ON Semiconductor
Description:
Inverters SGL SCHMITT-TRIGGER
Lifecycle:
New from this manufacturer.
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