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DMN2400UFD-7

P1-P3P4-P6
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN2400UFD
NEW PROD UCT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
I
D
T
A
= +25°C
20V
0.9A
0.7A
0.5A
0.3A
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
Mechanical Data
Case: X1-DFN1212-3
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2400UFD-7
X1-DFN1212-3
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
X1-DFN1212-3
Date Code Key
Year
2011
2012
…
2015
2016
2017
2018
2019
2020
2021
2022
Code
Y
Z
…
C
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Bottom View
Equivalent Circuit
Pin-out Top view
ESD PROTECTED
K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
YM
K24
e4
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN2400UFD
NEW PROD UCT
Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±12
V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.9
0.7
A
Continuous Drain Current (Note 6) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.7
0.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
3.0
A
Maximum Body Diode Forward Current (Note 6)
I
S
0.8
A
Thermal Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
0.4
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
280
°C/W
Total Power Dissipation (Note 6)
P
D
0.8
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
140
°C/W
Thermal Resistance, Junction to Case (Note 6)
R
Jc
112
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
-
-
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
-
-
80
100
nA
V
DS
= 4.5V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
-
-
±1.0
µA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45
-
1.0
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
0.35
0.6
Ω
V
GS
= 4.5V, I
D
= 200mA
0.45
0.8
V
GS
= 2.5V, I
D
= 200mA
0.6
1.0
V
GS
= 1.8V, I
D
= 100mA
-
0.7
1.6
V
GS
= 1.5V, I
D
= 50mA
Forward Transfer Admittance
|Y
fs
|
-
1.4
-
S
V
DS
= 3V, I
D
= 200mA
Diode Forward Voltage
V
SD
0.7
1.2
V
V
GS
= 0V, I
S
= 500mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
-
37.0
-
pF
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
5.7
-
pF
Reverse Transfer Capacitance
C
rss
-
4.2
-
pF
Gate Resistance
R
g
-
68
-
Ω
V
DS
= 0V, V
GS
= 0V,
Total Gate Charge
Q
g
-
0.5
-
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
-
0.07
-
nC
Gate-Drain Charge
Q
gd
-
0.1
-
nC
Turn-On Delay Time
t
D(on)
-
4.06
-
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
Turn-On Rise Time
t
r
-
7.28
-
ns
Turn-Off Delay Time
t
D(off)
-
13.74
-
ns
Turn-Off Fall Time
t
f
-
10.54
-
ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2400UFD
Document number: DS35475 Rev. 5 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN2400UFD
NEW PROD UCT
0
0.5
1.0
1.5
2.0
0 1 2 3 4 5
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I , DRAIN CURRENT (A)
D
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0
0.4
0.8
1.2
1.6
2.0
0 0.4 0.8 1.2 1.6 2
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 1.8V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 1.5V
GS
V = 5.0V
GS
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5.V
I = 500mA
GS
D
V = 4.5V
I = 1.0A
GS
D
0
0.2
0.4
0.6
0.8
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
P1-P3P4-P6

DMN2400UFD-7

Mfr. #:
Buy DMN2400UFD-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch Enh Mode FET 1.0V Max 0.4W Pd
Lifecycle:
New from this manufacturer.
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