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NTD4809NT4G

P1-P3P4-P6P7-P9
NTD4809N, NVD4809N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
6.5 V
10
0.020
30
0.005
0
60
1.5
1.0
0.5
10,000
100,000
05
60
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
3
0.045
4
0.020
0.010
0
5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 125100
23
1510 2
5
5
3
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
100
T
J
= 175°C
T
J
= 125°C
80
0
45
T
J
= 25°C
20
10
7 V
5 V
6 V
2.0
6
1000
4
10
610
0.030
40
0.010
50
4.5 V
3.4 V
3.6 V
3.8 V
80
20
40
120
60
40
120
20
100
I
D
= 30 A
T
J
= 25°C
789
0.005
0.015
0.025
0.040
0.035
25 35 45 55
V
GS
= 11.5 V
150
100
3.2 V
T
J
= 25°C
0.015
15 20
50
90
70
10
30
110
4.2 V
5.5 V
NTD4809N, NVD4809N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
10 0 10 15 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1000
0
V
GS
V
DS
2000
55
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
C
iss
1500
2500
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
12
4
105
I
D
= 30 A
0 V < V
GS
< 11.5 V
T
J
= 25°C
Q
2
Q
T
2
6
0
0.5
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 0.7 1
.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8 0.9
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
GS
= 20 V
SINGLE PULSE
T
A
= 25°C
20
6
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 15 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
20
60
80
100 125
100
120
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
150
500
40
8
10
1
11
3
5
7
9
1 2 3 4 6 7 8 9 111213141516171819202122232425
Q
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
10 ms
1 ms
100 ms
10
0.01 10 100
1
1000
1
0.1
0.01
100
0.1
10 ms
NTD4809N, NVD4809N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 13. Avalanche Characteristics
10001 100
PULSE WIDTH (ms)
0.1
I
D
, DRAIN CURRENT (AMPS)
10
10
125°C
1
100
100°C
25°C
Figure 14. Thermal Response
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
r(t) (°C/W)
t, TIME (s)
ORDERING INFORMATION
Order Number Package Shipping
†
NTD4809NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4809N−1G IPAK
(Pb−Free)
75 Units/Rail
NTD4809N−35G IPAK Trimmed Lead
(3.5 ± 0.15 mm)
(Pb−Free)
75 Units/Rail
NVD4809NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P9

NTD4809NT4G

Mfr. #:
Buy NTD4809NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 30V 58A 9MOHM
Lifecycle:
New from this manufacturer.
Delivery:
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