Characteristics STPS2545C
2/10 Doc ID 8736 Rev 4
1 Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
δ = 0.5
TO-220AB D
2
PAK
T
c
=160 °C
Per diode 12.5
A
TO-220FPAB
T
c
=140 °C
Per device 25
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 200 A
I
RRM
Repetitive peak reverse current
t
p
= 2 µs square F=1 kHz
1 A
I
RSM
Non repetitive peak reverse current
t
p
= 100 µs square
2A
P
ARM
Repetitive peak avalanche power
t
p
= 1 µs T
j
= 25 °C
4800 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
1. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK Per diode 1.6
° C/W
TO-220FPAB 4
TO-220AB / D
2
PAK Total 1.1
° C/W
TO-220FPAB 3.5
R
th (c)
Coupling
TO-220AB / D
2
PAK 0.6
° C/W
TO-220FPAB 3
