IMBD4448
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-13
1
Document Number: 85732
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Device on fiberglass substrate, see layout on next page.
12
3
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
IMBD4448
IMBD4448-E3-08 or IMBD4448-E3-18
Single diode A3 Tape and reel
IMBD4448-HE3-08 or IMBD4448-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75 V
Peak reverse voltage V
RM
100 V
Rectified current (average) half wave
rectification with resistive load
(1)
f 50 Hz I
F(AV)
150 mA
Surge forward current t < 1 s and T
J
= 25 °C I
FSM
500 mA
Power dissipation
(1)
P
tot
350 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
450 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 65 to + 150 °C
Operating temperature range T
op
- 55 to + 150 °C