Characteristics TPDVxx40
2/8 DocID18270 Rev 2
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180° conduction angle) T
c
= 75 °C 40 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 2.5 ms
T
j
= 25 °C
590
At
p
= 8.3 ms 370
t
p
= 10 ms 350
I
2
tI
2
t value for fusing t
p
= 10 ms T
j
= 25 °C 610 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 500 mA; dl
G
/dt = 1 A/µs
Repetitive F = 50 Hz 20
A/µs
Non repetitive 100
V
DRM
V
RRM
Repetitive peak off-state voltage
TPDV640
T
j
= 125 °C
600
VTPDV840 800
TPDV1240 1200
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
°C
T
L
Maximum lead temperature for soldering during 10 s at 2 mm from case 260 °C
V
INS(RMS)
(1)
Insulation rms voltage 2500 V
1. A1, A2, gate terminals to case for 1 minute
Table 3. Electrical Characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test condition Quadrant Value Unit
I
GT
V
D
= 12 V DC, R
L
= 33 Ω I - II - III
Max. 200 mA
V
GT
Max. 1.5 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C I - II - III Min. 0.2 V
t
gt
V
D
= V
DRM
I
G
= 500 mA dl
G
/dt = 3A/µs I - II - III Typ. 2.5 µs
I
H
(1)
I
T
= 500 mA Gate open Typ. 50 mA
I
L
I
G
= 1.2 x I
GT
I - III
Typ.
100
mA
II 200
dV/dt
Linear slope up to :
V
D
= 67% V
DRM
Gate open
T
j
= 125 °C Min. 500 V/µs
V
TM
(1)
I
TM
= 56 A t
p
= 380 µs Max. 1.8 V
I
DRM
I
RRM
V
DRM =
V
RRM
T
j
= 25 °C
Max.
20 µA
T
j
= 125 °C 8 mA
(dI/dt)c
(1)
(dV/dt)c = 200 V/µs
T
j
= 125 °C Min.
35
A/ms
(dV/dt)c = 10 V/µs 142
1. For either polarity of electrode A
2
voltage with reference to electrode A
1
.
