OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

V6KL45DU-M3/H

P1-P3P4-P5
V6KL45DU
www.vishay.com
Vishay General Semiconductor
Revision: 18-Apr-18
1
Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.30 V at I
F
= 1.5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
With infinite heatsink
(2)
Free air, mounted on recommended pad area
(3)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
TJA
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 3 A
V
RRM
45 V
I
FSM
80 A
V
F
at I
F
= 3 A (T
A
= 125 °C) 0.36 V
T
J
max. 150 °C
Package FlatPAK 5 x 6
Circuit configuration Separated cathode
4
3
1
2
5
6
8
7
3
1
2
5
6
8
7
1 and / or 2
3 and / or 4
7, 8
5, 6
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V6KL45DU UNIT
Device marking code V6L45D
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current per device
I
F(AV)
(1)
6A
I
F(AV)
(2)
4.4 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
80 A
Operating junction and storage temperature range T
J
(3)
, T
STG
-40 to +150 °C
V6KL45DU
www.vishay.com
Vishay General Semiconductor
Revision: 18-Apr-18
2
Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width d 5 ms
Notes
(1)
The heat generated must be less than thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
TJA
(2)
Free air, mounted on recommended copper pad area; thermal resistance R
TJA
- junction-to-ambient
(3)
Mounted on infinite heat sink; thermal resistance R
TJM
- junction-to-mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 1.5 A
T
A
= 25 °C
V
F
(1)
0.41 -
V
I
F
= 3 A 0.46 0.54
I
F
= 1.5 A
T
A
= 125 °C
0.30 -
I
F
= 3 A 0.36 0.44
Reverse current per diode V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-0.45
mA
T
A
= 125 °C 5 15
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
550 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V6KL45DU UNIT
Typical thermal resistance per device
R
TJA
(1)(2)
80
°C/W
R
TJM
(3)
3.2
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V6KL45DU-M3/H 0.10 H 1500 7" diameter plastic tape and reel
V6KL45DU-M3/I 0.10 I 6000 13" diameter plastic tape and reel
V6KL45DUHM3/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
V6KL45DUHM3/I
(1)
0.10 I 6000 13" diameter plastic tape and reel
V6KL45DU
www.vishay.com
Vishay General Semiconductor
Revision: 18-Apr-18
3
Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
measured at cathode
terminal mount typical values
R
thJM
= 3.2 °C/W
R
thJA
= 80 °C/W
0.0
0.3
0.6
0.9
1.2
1.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 100 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
T
J
= 125 °
C
T
J
= 100 °C
T
J
= 25 °C
T
J
= -40 °C
1
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction-to-ambient
P1-P3P4-P5

V6KL45DU-M3/H

Mfr. #:
Buy V6KL45DU-M3/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 45V 3A dual TMBS FlatPAK 5 x 6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet