V10PN50-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
1
Document Number: 89965
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High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.30 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Notes
(1)
Mounted on 30 mm x 30 mm 2 oz. pad PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
50 V
I
FSM
180 A
V
F
at I
F
= 10 A 0.40 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variation Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2Cathode
K
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10PN50 UNIT
Device marking code 10N5
Maximum repetitive peak reverse voltage V
RRM
50 V
Maximum average forward rectified current (fig. 1)
I
F
(1)
10
A
I
F
(2)
5.3
Maximum DC reverse voltage V
DC
35 V
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
180 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C