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V10PN50-M3/87A

P1-P3P4-P5
V10PN50-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
1
Document Number: 89965
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.30 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Notes
(1)
Mounted on 30 mm x 30 mm 2 oz. pad PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
50 V
I
FSM
180 A
V
F
at I
F
= 10 A 0.40 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variation Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2Cathode
K
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10PN50 UNIT
Device marking code 10N5
Maximum repetitive peak reverse voltage V
RRM
50 V
Maximum average forward rectified current (fig. 1)
I
F
(1)
10
A
I
F
(2)
5.3
Maximum DC reverse voltage V
DC
35 V
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
180 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V10PN50-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
2
Document Number: 89965
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance R
JA
- junction-to-ambient
(2)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(3)
Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance R
JM
- junction-to-mount measured at cathode side
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.40 -
V
I
F
= 10 A 0.47 0.55
I
F
= 5 A
T
A
= 125 °C
0.30 -
I
F
= 10 A 0.40 0.49
Reverse current V
R
= 50 V
T
A
= 25 °C
I
R
(2)
50 1500 μA
T
A
= 125 °C 32 85 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10PN50 UNIT
Typical thermal resistance
R
JA
(1) (2)
70
°C/W
R
JM
(3)
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V10PN50-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V10PN50-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
0
1
2
3
4
5
6
7
8
9
10
11
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
measured at cathode side
T
M
= 130 °C, R
thJM
= 4 °C/W
T
A
= 25 °C, R
thJA
= 70 °C/W
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
5.6
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T t
p
T
V10PN50-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
3
Document Number: 89965
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.01
0.1
1
10
100
1000
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
100
1000
10 000
0.1 1 10 50
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 60 MHz
V
sig
= 50 mV
p-p
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
P1-P3P4-P5

V10PN50-M3/87A

Mfr. #:
Buy V10PN50-M3/87A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A,50V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
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