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IXFH160N15T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH160N15T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.03.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 80A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
R
DS
(
on) Limit
DC
25µs
10ms
1ms
100µs
© 2010 IXYS CORPORATION, All Rights Reserved
IXFH160N15T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
12
14
16
18
20
22
80 90 100 110 120 130 140 150 160
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 2 , V
GS
= 10V
V
DS
= 75V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
246810121416
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 80A
I
D
= 160A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
18
22
26
30
34
38
42
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
40
50
60
70
80
90
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 75V
I
D
= 80A, 160A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
22
24
26
28
30
32
34
80 90 100 110 120 130 140 150 160
I
D
- Amperes
t
f
- Nanoseconds
35
45
55
65
75
85
95
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 75V
I
D
= 160A
I
D
= 80A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
2 4 6 8 10 12 14 16
R
G
- Ohms
t
f
- Nanoseconds
50
75
100
125
150
175
200
225
250
275
300
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 160A
I
D
= 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH160N15T2
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF:F_160N15T2(7V)1-14-10-A
P1-P3P4-P6

IXFH160N15T2

Mfr. #:
Buy IXFH160N15T2
Manufacturer:
Littelfuse
Description:
MOSFET Trench T2 HiperFET Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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