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IXKP10N60C5

P1-P3P4-P4
© 2009 IXYS All rights reserved
4 - 4
20090209c
IXKP 10N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
T
j
[°C]
R
)no(SD
[
Ω
]
25 °C
150 °C
0
4
8
12
16
20
24
28
32
36
40
0246810
V
GS
[V]
I
D
]A[
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
2
10
1
10
0
10
-1
0 0.5 1 1.5 2
V
SD
[V]
I
F
]A[
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
10
0
050100150200
V
DS
[V]
C]Fp[
0
50
100
150
200
250
20 60 100 140 180
T
j
[°C]
E
S
A
]J
m
[
V
DS
=
T
JV
= 150°C
I
D
= 5.2 A
V
GS
= 10 V
V
DS
> 2
·
R
DS(on) max
· I
D
T
J
=
T
J
=
V
DS
=
V
GS
= 0 V
f = 1 MHz
I
D
= 3.4 A
I
D
= 0.25 mA
D
= t
p
/T
I
D
= 5.2 A pulsed
5 V 5.5 V
6 V
6.5 V
7 V
20 V
0
0.4
0.8
1.2
1.6
0 5 10 15 20
I
D
[A]
R
)
n
o
(
SD
[
Ω
]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
10
0
10
-1
10
-2
t
p
[s]
Z
CJht
]W
/K
[
Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
Fig. 12 Max. transient thermal
impedance
P1-P3P4-P4

IXKP10N60C5

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Description:
MOSFET N-CH 600V 10A TO220AB
Lifecycle:
New from this manufacturer.
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