Document Number: 91049 www.vishay.com
S-82998-Rev. A, 12-Jan-08 1
Power MOSFET
IRF734, SiHF734
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 24 mH, R
G
= 25 Ω, I
AS
= 4.9 A (see fig. 12).
c. I
SD
≤ 4.9 A, dI/dt ≤ 80 A/µs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 450
R
DS(on)
(Ω)V
GS
= 10 V 1.2
Q
g
(Max.) (nC) 45
Q
gs
(nC) 6.6
Q
gd
(nC) 24
Configuration Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
RoHS
COMPLIANT
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
IRF734PbF
SiHF734-E3
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
450
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
4.9
AT
C
= 100 °C 3.1
Pulsed Drain Current
a
I
DM
20
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
b
E
AS
330 mJ
Repetitive Avalanche Current
a
I
AR
4.9 A
Repetitive Avalanche Energy
a
E
AR
7.4 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
74 W
Peak Diode Recovery dV/dt
c
dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m