4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
07/20/2015
IS65LV256AL
IS62LV256AL
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 6 pF
cout OutputCapacitance Vout = 0V 5 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°c, f=1MHz,Vdd=3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-20 ns -45 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
Icc1 VddOperating Vdd = Max.,CE = VIl Com. — 4 — 4 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 5 — 5
Auto. — — — 8
Icc2 VddDynamicOperating Vdd = Max.,CE = VIl Com. — 20 — 10 mA
Supply Current Iout = 0 mA, f = fmax Ind. — 25 — 12
Auto. — — — 20
typ.
(2)
15 7
Isb1 TTLStandbyCurrent Vdd = Max., Com. — 1.5 — 1.5 mA
(TTLInputs) VIn = VIh or VIl Ind. — 1.8 — 1.8
CE
≥
VIh, f = 0 Auto. — — — 2
Isb2 CMOSStandby Vdd = Max., Com. — 15 — 15 µA
Current(CMOSInputs) CE
≤
Vdd – 0.2V, Ind. — 20 — 20
VIn > Vdd – 0.2V, or Auto. — — — 50
VIn
≤
0.2V, f = 0 typ.
(2)
2 2
Note:
1. At f = f
max, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=3.3V,Ta = 25
o
Candnot100%tested.