CDBQR40
QW-A1124
Page 1
REV:B
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
IO
VR(RMS)
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Symbol
Parameter
Conditions
Min
Max
Unit
RMS reverse voltage
mA
V
V
V
200
28
40
40
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
A0.6
PD
Power dissipation
mW
125
TSTG
Tj
Storage temperature
Junction temperature
O
C
O
C
+125
+125
-65
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
IF = 40mA
IF = 1mA
VF V
1
0.38
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Reverse current
Capacitance between terminals
Reverse recovery time
VR = 30V
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
IR
CT
Trr
uA
pF
nS
5
5
0.2
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BC
-Mounting position: Any
-Weight: 0.001 gram(approx.).
Comchip Technology CO., LTD.
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
SMD Schottky Barrier Diode
0402/SOD-923F
Io = 200 mA
VR = 40 Volts
RoHS Device
