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SI4162DY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
Vishay Siliconix
Si4162DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= - 50 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
012345678 910
T
J
=25 °C
T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V )
Time (s)
Power (W)
0
20
40
60
80
100
011100.0 0.01 0.1
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
100 µs
1s
10 s
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
100 s, DC
10 µs
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
www.vishay.com
5
Vishay Siliconix
Si4162DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0
5
10
15
20
25
0 25 50 75 100 125 150
Power, Junction-to-Case
T
C
- Case Temperature (°C)
Power (W)
0.0
1.5
3.0
4.5
6.0
0 25 50 75 100 125 150
Power, Junction-to-Ambient
T
A
-Ambient Temperature (°C)
Power (W)
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
www.vishay.com
6
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
Vishay Siliconix
Si4162DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68967.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.2
0.1
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9

SI4162DY-T1-GE3

Mfr. #:
Buy SI4162DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
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