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PESD5V0U1UB,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PESD5V0U1UA_UB_UL_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 3 of 12
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1]
-9kV
MIL-STD-883 (human
body model)
-10kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. ESD pulse waveform according to IEC 61000-4-2
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0U1UA_UB_UL_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 4 of 12
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff voltage - - 5 V
I
RM
reverse leakage current V
RWM
= 5 V - 1 100 nA
V
BR
breakdown voltage I
R
= 5 mA 5.8 6.8 8.8 V
C
d
diode capacitance f=1MHz
V
R
= 0 V - 2 2.6 pF
V
R
= 5 V - 1.7 2.3 pF
r
dif
differential resistance I
R
= 1 mA - - 100 Ω
f = 1 MHz; T
amb
=25°C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
Fig 3. V-I characteristics for a unidirectional
ESD protection diode
V
R
(V)
054231
006aab348
1.8
1.7
1.9
2.0
C
d
(pF)
1.6
006aaa407
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−I
PP
V
I
P-N
−
+
PESD5V0U1UA_UB_UL_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 30 October 2008 5 of 12
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
Fig 4. ESD clamping test setup and waveforms
006aab350
50 Ω
R
Z
C
Z
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
P1-P3P4-P6P7-P9P10-P12P13-P13

PESD5V0U1UB,115

Mfr. #:
Buy PESD5V0U1UB,115
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors DIODE ARRAY ESD 1L ULTRA LO CD
Lifecycle:
New from this manufacturer.
Delivery:
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