Philips Semiconductors Product specification
74ABT20Dual 4-input NAND gate
1995 Sep 22
2
ABSOLUTE MAXIMUM RATINGS
1,
2
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current V
I
< 0 –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current V
O
< 0 –50 mA
V
OUT
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
I
OUT
DC output current output in Low state 40 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
MIN MAX
V
CC
DC supply voltage 4.5 5.5 V
V
I
Input voltage 0 V
CC
V
V
IH
High-level input voltage 2.0 V
V
IL
Low-level input voltage 0.8 V
I
OH
High-level output current –15 mA
I
OL
Low-level output current 20 mA
∆t/∆v Input transition rise or fall rate 0 10 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS
T
amb
= +25°C
T
amb
= –40°C
to +85°C
UNIT
MIN TYP MAX MIN MAX
V
IK
Input clamp voltage V
CC
= 4.5V; I
IK
= –18mA –0.9 –1.2 –1.2 V
V
OH
High-level output voltage V
CC
= 4.5V; I
OH
= –15mA; V
I
= V
IL
or V
IH
2.5 2.9 2.5 V
V
OL
Low-level output voltage V
CC
= 4.5V; I
OL
= 20mA; V
I
= V
IL
or V
IH
0.35 0.5 0.5 V
I
I
Input leakage current V
CC
= 5.5V; V
I
= GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
OFF
Power-off leakage current V
CC
= 0.0V; V
O
or V
I
≤ 4.5V ±5.0 ±100 ±100 µA
I
CEX
Output High leakage current V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5.0 50 50 µA
I
O
Output current
1
V
CC
= 5.5V; V
O
= 2.5V –50 –75 –180 –50 –180 mA
I
CC
Quiescent supply current V
CC
= 5.5V; V
I
= GND or V
CC
2 50 50 µA
∆I
CC
Additional supply current per
input pin
2
V
CC
= 5.5V; One data input at 3.4V, other
inputs at V
CC
or GND
0.25 500 500 µA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.
