Micropower, Ultrasensitive
Hall-Effect Switches
A3211 and
A3212
7
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
FUNCTIONAL DESCRIPTION
Low Average Power
Internal timing circuitry activates the IC for 45 µs and deactivates
it for the remainder of the period (45 ms). A short "awake" time
allows for stabilization prior to the sampling and data latching on
the falling edge of the timing pulse. The output during the "sleep"
time is latched in the last sampled state. The supply current is not
affected by the output state.
Chopper-Stabilized Technique
The Hall element can be considered as a resistor array similar to a
Wheatstone bridge. A large portion of the offset is a result of the
mismatching of these resistors. These devices use a proprietary
dynamic offset cancellation technique, with an internal high-fre-
quency clock to reduce the residual offset voltage of the Hall ele-
ment that is normally caused by device overmolding, temperature
dependencies, and thermal stress. The chopper-stabilizing tech-
nique cancels the mismatching of the resistor circuit by chang-
ing the direction of the current flowing through the Hall plate
using CMOS switches and Hall voltage measurement taps, while
maintaing the Hall-voltage signal that is induced by the external
magnetic flux. The signal is then captured by a sample-and-hold
circuit and further processed using low-offset bipolar circuitry.
This technique produces devices that have an extremely stable
quiescent Hall output voltage, are immune to thermal stress, and
have precise recoverability after temperature cycling. A relatively
high sampling frequency is used for faster signal processing capa-
bility can be processed.
More detailed descriptions of the circuit operation can be found
in: Technical Paper STP 97-10, Monolithic Magnetic Hall Sensing
Using Dynamic Quadrature Offset Cancellation and Technical
Paper STP 99-1, Chopper-Stabilized Amplifiers With A Track-and-
Hold Signal Demodulator.
Dwg. WH-017-2
0
PERIOD
"AWAKE"
"SLEEP"
I
DD(EN)
I
DD(DIS)
SAMPLE &
OUTPUT LATCHED
+V
HALL
VOLTAGE
B
+
Dwg. AH-011-2
Dwg. EH-012-1
SAMPLE
& HOLD
X
+V
Micropower, Ultrasensitive
Hall-Effect Switches
A3211 and
A3212
8
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Operation
The output of the A3212 switches low (turns on) when a magnetic
field perpendicular to the Hall element exceeds the operate point
B
OPS
(or is less than B
OPN
). After turn-on, the output is capable
of sinking up to 1 mA and the output voltage is V
OUT(ON)
. When
the magnetic field is reduced below the release point B
RPS
(or
increased above B
RPN
), the device output switches high (turns
off). The difference in the magnetic operate and release points is
the hysteresis (B
hys
) of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external
mechanical vibration and electrical noise. The A3211 functions in
the same manner, except the output voltage is reversed from the
A3212, as shown in the figures to the right.
As used here, negative flux densities are defined as less than zero
(algebraic convention), i.e., -50 G is less than +10 G.
Applications
Allegro's pole-independent processing technique allows for opera-
tion with either a north pole or south pole magnet orientation,
enhancing the manufacturability of the device. The state-of-the-
art technology provides the same output polarity for either pole
face.
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to reduce both external noise
and noise generated by the chopper-stabilization technique. This
is especially true due to the relatively high impedance of battery
supplies.
The simplest form of magnet that will operate these devices is
a bar magnet with either pole near the branded surface of the
device. Many other methods of operation are possible. Extensive
applications information for Hall-effect devices is available in:
Hall-Effect IC Applications Guide, Application Note 27701;
Hall-Effect Devices: Guidelines for Designing Subassemblies
Using Hall-Effect Devices, Application Note 27703.1;
Soldering Methods for Allegro’s Products — SMD and Through-
Hole, Application Note 26009.
All are provided at
www.allegromicro.com
0
+B
0
-B
OUTPUT ON
OUTPUT ON
5 V
MAX
B
OPS
B
RPS
B
OPN
B
RPN
OUTPUT VOLTAGE
MAGNETIC FLUX
A3212
OUTPUT OFF
0
+B
0
-B
5 V
MAX
OUTPUT VOLTAGE
MAGNETIC FLUX
OUTPUT OFF
OUTPUT OFF
B
RPS
OPS
B
OPN
RPN
OUTPUT ON
B
A3211
B
OUTPUT
Dwg. EH-013-2
0.1 µF
SUPPLY
(3 V BATTERY)
50 k Ω
X
V
DD
1
2
3
Micropower, Ultrasensitive
Hall-Effect Switches
A3211 and
A3212
9
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Package EH, 6-Pin DFN
C0.08
7X
C
SEATING
PLANE
6
21
E
E
F
C
G
E
D
A
1
6
2
1.00
3.70
1.25
0.50
0.95
0.30
1
6
2.00 ±0.15
0.88
1.57
3.00 ±0.15
0.75 ±0.05
1.224 ±0.050
1.042
+0.100
–0.150
0.25 ±0.05
0.5 BSC
0.55 ±0.10
PCB Layout Reference View
B
Standard Branding Reference View
1
YWW
LLL
NN
Y= Last two digits of year of manufacture
W = Week of manufacture
L= Lot number
N = Last two digits of device part number
For Reference Only – Not for Tooling Use
(Reference DWG-2861 and JEDEC MO-229WCED, Type 1)
Dimensions in millimeters – NOT TO SCALE
Exact case and lead configuration at supplier discretion within limits shown
Branding scale and appearance at supplier discretion
A D
B E
C F
G
Terminal #1 mark area
Exposed thermal pad (reference only, terminal #1 identifier appearance at supplier discretion)
Reference land pattern layout; all pads a minimum of 0.20 mm from all adjacent pads;
adjust as necessary to meet application process requirements and PCB layout tolerances;
when mounting on a multilayer PCB, thermal vias at the exposed thermal pad land can
improve thermal dissipation (reference EIA/JEDEC Standard JESD51-5)
Coplanarity includes exposed thermal pad and terminals
Hall Element (not to scale); U.S. customary dimensions controlling
Active Area Depth, 0.32 mm NOM
PACKAGE OUTLINE DRAWINGS

A3211ELHLX-T

Mfr. #:
Manufacturer:
Description:
MAGNETIC SWITCH OMNIPOLAR SOT23W
Lifecycle:
New from this manufacturer.
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