MMQA, SZMMQA Quad Common Anode Series
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2
THERMAL CHARACTERISTICS (T
A
= 25°C Unless Otherwise Noted)
Characteristic
Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T
A
≤ 25°C
P
pk
24
W
Peak Power Dissipation @ 20 ms (Note 2)
@ T
A
≤ 25°C
P
pk
150
W
Total Power Dissipation on FR-5 Board (Note 3)
@ T
A
= 25°C
P
D
225
1.8
MW
mW/°C
Thermal Resistance from Junction−to−Ambient R
q
JA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 4)
@ T
A
= 25°C
Derate above 25°C
P
D
300
2.4
MW
mW/°C
Thermal Resistance from Junction−to−Ambient R
q
JA
417
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration)
T
L
260
°C
1. Non-repetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 4.
2. Non-repetitive current pulse per Figure 6 and derate above T
A
= 25°C per Figure 4.
3. FR-5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS (T
A
= 25°C Unless Otherwise Noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V
F
= 0.9 V Max @ I
F
= 10 mA)
Device
(Note 5)
Breakdown Voltage
Max
Reverse
Leakage
Current
Max Zener
Impedance
(Note 7)
Max
Reverse
Surge
Current
Max
Reverse
Voltage @
I
RSM
(Note 8)
(Clamping
Voltage)
Maximum
Temperature
Coefficient
of V
Z
Capacitance
@ 0 Volt
Bias, 1 MHz
VZT
(Note 6)
(V)
@ I
ZT
I
R
V
R
(pF)
Min Nom Max (mA) (nA) (V)
ZZT @ IZT
(W) (mA)
IRSM
(A)
VRSM
(V)
(mV/°C)
Min Max
MMQA5V6T1G 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26 − −
MMQA6V2T1G/T3G 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6 − −
MMQA6V8T1G 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9 100 250
MMQA12VT1G 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14 − −
MMQA13VT1G 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15 − −
MMQA15VT1G 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16 − −
MMQA18VT1G 17.1 18 18.9 1.0 75 14 80 0.923 26 19 − −
MMQA20VT1G/T3G 19 20 21 1.0 75 15 80 0.84 28.6 20.1 − −
MMQA22VT1G 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22 − −
MMQA24VT1G 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25 − −
MMQA27VT1G 25.7 27 28.4 1.0 75 21 125 0.615 39 28 − −
MMQA33VT1G 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37 − −
5. Includes SZ-prefix devices where applicable.
6. V
Z
measured at pulse test current I
T
at an ambient temperature of 25°C.
7. Z
ZT
is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I
Z(AC)
= 0.1 I
Z(DC)
,
with AC frequency = 1 kHz.
8. Surge current waveform per Figure 5 and derate per Figure 4.
