AON7403

AON7403
30V
P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -29A
R
DS(ON)
(at V
GS
=-10V) < 18mW
R
DS(ON)
(at V
GS
=-5V) < 36mW
100% UIS Tested
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
qJC
Max
-30
°C/W
R
qJA
22
47
30
Thermal Characteristics
Units
Typ
5
Maximum Junction-to-Ambient
A
V
±2 5
V
Maximum Junction-to-Lead
The AON7403 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.
Maximum
Units
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-30V
°C/W
°C/W
Maximum Junction-to-Ambient
A D
4.2
60
A
T
C
=100°C
-18
-80
Continuous Drain
Current
T
C
=25°C
I
D
-29
A
T
A
=70°C
-8.5
Continuous Drain
Current
T
A
=25°C
I
DSM
-11
Power Dissipation
B
T
C
=25°C
P
D
25
W
T
C
=100°C
10
24
-55 to 150
°C
Power Dissipation
A
T
A
=25°C
P
DSM
4.1
A
29
mJ
W
T
A
=70°C
2.6
DFN 3x3_EP
Top View Bottom View
Pin 1
Top View
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
S
Rev.4.0: November. 2013 www.aosmd.com Page 1 of 5
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
-1.7 -2.2 -3 V
I
D(ON)
-80 A
14 18
T
J
=125°C 20 25
26 36
mW
g
FS
20 S
V
SD
-0.7 -1 V
I
S
-22 A
C
iss
1130 1400 pF
C
oss
240 pF
C
rss
155 pF
R
g
5.8 8 W
Q
g
(10V) 18 24 nC
Q
gs
5.5 nC
Q
gd
3.3 nC
t
D(on)
8.7 ns
t
r
8.5 ns
t
D(off)
18 ns
t
f
7 ns
t
rr 12 16 ns
Q
rr 26
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=-8A, dI/dt=500A/ms
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.8W,
R
GEN
=3W
mW
Forward Transconductance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
Gate Source Charge
Gate Drain Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
mA
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250mA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
Reverse Transfer Capacitance
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-8A
V
GS
=-5V, I
D
=-5A
Diode Forward Voltage
I
F
=-8A, dI/dt=500A/ms
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
V
DS
=0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Body Diode Reverse Recovery Time
V
DS
=V
GS
I
D
=-250mA
R
DS(ON)
Static Drain-Source On-Resistance
A. The value of R
qJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
qJA
t 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
qJA
is the sum of the thermal impedence from junction to case R
qJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev.4.0: November. 2013 www.aosmd.com Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
20
40
60
80
1 2 3 4 5 6
-I
D
(A)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
0 5 10 15 20
R
DS(ON)
(mW)
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-I
S
(A)
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
25°
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS
=-5V
I
D
=-5A
V
GS
=-10V
I
D
=-8A
10
20
30
40
50
2 4 6 8 10
R
DS(ON)
(mW)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=-5V
V
GS
=-5V
V
GS
=-10V
I
D
=-8A
25°
125°
0
20
40
60
80
0 1 2 3 4 5
-I
D
(A)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-4V
-4.5V
-10V
-6V
-8V
Rev.4.0: November. 2013 www.aosmd.com Page 3 of 5

AON7403

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 30V 11A 8DFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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