LARONTROL
Electronic Devices
Distributed by
USA
3540 Bassett Street
Santa Clara, CA 95054
Phone: (408) 982-0700
FAX: (408) 496-0670
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
www.IXYS.net
Type
Number
Repetitive
Peak
Minimum
Avalanche
Voltage
V
(BR)R
CIRCUIT DIAGRAM
IXYS reserves the right to change limits, test conditions and dimensions.
HTZ180D Series High Voltage
I
F(AV)
= 1.3 A Diode Rectifier
V
RRM
= 35000 V Module
Centre Tap
-V
RRM
-
_
+
CURRENT RATINGS - AIR COOLED
I
F(AV)
Mean forward current Half wave resistive load T
amb
= 35ºC 1.3 A
I
F
Continuous (direct) forward current T
amb
= 35ºC 1.6 A
R
th(j-a)
Thermal resistance junction to ambient 4.7 ºC/W
CURRENT RATINGS - OIL COOLED
I
F(AV)
Mean forward current Half wave resistive load T
oil
= 60ºC 3.8 A
I
T
Continuous (direct) forward current T
oil
= 60ºC 4.5 A
R
th(j-o)
Thermal resistance junction to oil 1.1 ºC/W
SURGE RATINGS
I
2
t I
2
t for fusing 10 ms half sine T
vj
= 150ºC 50 A
2
sec
I
FSM
Surge (non-repetitive) forward current T
vj
= 150ºC 100 A
TEMPERATURE AND FREQUENCY RATINGS
T
vj
Virtual junction temperature Forward (conducting) 180 ºC
Reverse (blocking) 180 ºC
T
stg
Storage temperature range -40 to 100 ºC
f Frequency range 20 to 400 Hz
CHARACTERISTICS T
case
= 25ºC unless otherwise stated
V
FM
Forward voltage At 2 Amps peak max 22.0 V
I
RM
Peak reverse current At V
RRM
; T
case
= 150°C max 0.5 mA
HTZ180D35K 35000 37400
HTZ180D30K 30000 33000
HTZ180D26K 26000 28600
HTZ180D22K 22000 24200
Dimensioned Outlines
Dimensions shown are maximum in mm
Weight typ.: 0,50 Kg
Issue 1 June 1998
ZD
32
222
246
TAPPED M4, 2 OFF
111111
MOUNTING BUSHES
31
264
TAPPED M4, 3 OFF
