NXP Semiconductors
PMEG45T15EPD
45 V, 15 A low VF Trench MEGA Schottky barrier rectifier
PMEG45T15EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 September 2015 3 / 13
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
= 25 °C - 45 V
I
F
forward current T
sp
= 115 °C; δ = 1 - 21 A
I
F(AV)
average forward current δ = 0.5 ; f = 20 kHz; T
sp
≤ 120 °C;
square wave
- 15 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms; T
j(init)
= 25 °C; square wave - 210 A
[1] - 1.4 W
[2] - 1.8 W
P
tot
total power dissipation T
amb
≤ 25 °C
[3] - 3.1 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 90 K/W
[1][3] - - 70 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 40 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 3 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of cathode tab.
