© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 3
1 Publication Order Number:
NCD5700/D
NCD5700
High Current IGBT Gate
Driver
The NCD5700 is a high−current, high−performance stand−alone
IGBT driver for high power applications that include solar inverters,
motor control and uninterruptable power supplies. The device offers a
cost−effective solution by eliminating many external components.
Device protection features include Active Miller Clamp, accurate
UVLO, EN input, DESAT protection and Active Low FAULT output.
The driver also features an accurate 5.0 V output and separate high and
low (VOH and VOL) driver outputs for system design convenience.
The driver is designed to accommodate a wide voltage range of bias
supplies including unipolar and bipolar voltages. It is available in a
16−pin SOIC package.
Features
High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages
Low Output Impedance of VOH & VOL for Enhanced IGBT Driving
Short Propagation Delays with Accurate Matching
Direct Interface to Digital Isolator/Opto−coupler/Pulse Transformer
for Isolated Drive, Logic Compatibility for Non−isolated Drive
Active Miller Clamp to Prevent Spurious Gate Turn−on
DESAT Protection with Programmable Delay
Enable Input for Independent Driver Control
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE Capability
This Device is Pb−Free, Halogen−Free and RoHS Compliant
Typical Applications
Solar Inverters
Motor Control
Uninterruptible Power Supplies (UPS)
VCC
VEE
DESAT
VCC
VEE
GND
CLAMP
VOH
VOL
VREF
EN
VIN
FLT
Figure 1. Simplified Application Schematic
MARKING
DIAGRAM
www.onsemi.com
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
SOIC−16
D SUFFIX
CASE 751B
NCD5700DR2G
AWLYWW
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
1
2
3
4
5
6
7
8
16
12
11
10
9
(Top View)
GNDA
EN
VIN
VREF
FLT
NC
RSVD
NC
CLAMP
VOL
VOH
DESAT
VCC
13
GND
15
14
VEEA
VEE
PIN CONNECTIONS
NCD5700
www.onsemi.com
2
Figure 2. Detailed Block Diagram
V
EE
V
EE
V
REF
Q
Q
SET
CLR
S
R
Q
Q
SET
CLR
S
R
Q
Q
SET
CLR
S
R
V
UVLO
V
MC-THR
V
DESAT-THR
CLAMP
V
OL
DESAT
V
IN
V
REF
V
CC
V
CC
Bandgap
GND
+
-
+
-
+
-
EN
I
DESAT-CHG
TSD
DELAY
DELAY
V
OH
V
EEA
FLT
R
IN-H
V
REF
R
EN-H
Figure 3. Simplified Block Diagram
Logic Unit
UVLO
TSD
DESAT
LDO
CLAMP
VIN
FLT
GNDA
CLAMP
NC
RSVD
NC
VREF
EN
VEEA
VEE
GND
VOL
VOH
VCC
DESAT
VREF
VREF
VCC
VCC
NCD5700
www.onsemi.com
3
Table 1. PIN FUNCTION DESCRIPTION
Pin Name No. I/O/x Description
EN 1 I Enable input allows additional gating of VOH and VOL, and can be used when the driver output
needs to be turned off independent of the Microcontroller input.
VIN 2 I Input signal to control the output. In applications which require galvanic isolation, VIN is generated
at the opto output, the pulse transformer secondary or the digital isolator output. There is a signal
inversion from VIN to VOH/VOL. VIN is internally clamped to 5.5 V and has a pull−up resistor of
1MW to ensure that output is low in the absence of an input signal. A minimum pulse−width is re-
quired at VIN before VOH/VOL are activated.
VREF 3 O 5 V Reference generated within the driver is brought out to this pin for external bypassing and for
powering low bias circuits (such as digital isolators).
FLT 4 O Fault output (active low) that allows communication to the main controller that the driver has en-
countered a fault condition and has deactivated the output. Truth Table is provided in the datasheet
to indicate conditions under which this signal is asserted. Capable of driving optos or digital isolators
when isolation is required.
GNDA 5 x This pin provides a convenient connection point for bypass capacitors (e.g REF) on the left side of
the package.
NC 6,8 x Pins not internally connected.
RSVD 7 x Reserved. No connection is allowed.
DESAT 9 I Input for detecting the desaturation of IGBT due to a fault condition. A capacitor connected to this
pin allows a programmable blanking delay every ON cycle before DESAT fault is processed, thus
preventing false triggering.
VCC 10 x Positive bias supply for the driver. The operating range for this pin is from UVLO to the maximum. A
good quality bypassing capacitor is required from this pin to GND and should be placed close to the
pins for best results.
VOH 11 O Driver high output that provides the appropriate drive voltage and source current to the IGBT gate.
VOL 12 O Driver low output that provides the appropriate drive voltage and sink current to the IGBT gate. VOL
is actively pulled low during start−up and under Fault conditions.
GND 13 x This pin should connect to the IGBT Emitter with a short trace. All power pin bypass capacitors
should be referenced to this pin and kept at a short distance from the pin.
VEE 14 x A negative voltage with respect to GND can be applied to this pin and that will allow VOL to go to a
negative voltage during OFF state. A good quality bypassing capacitor is needed from VEE to GND.
If a negative voltage is not applied or available, this pin must be connected to GND.
VEEA 15 x Analog version of the VEE pin for any signal trace connection. VEE and VEEA are internally con-
nected.
CLAMP 16 I/O Provides clamping for the IGBT gate during the off period to protect it from parasitic turn−on. To be
tied directly to IGBT gate with minimum trace length for best results.

NCD5700DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers HIGH CURRENT IGBT GATE DR
Lifecycle:
New from this manufacturer.
Delivery:
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