©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJC790 Rev. D
FJC790 PNP Epitaxial Silicon Transistor
July 2007
FJC790
PNP Epitaxial Silicon Transistor
Camera Strobe Flash Application
• Complement to FJC690
• High Collector Current
• Low Collector-Emitter Saturation Voltage
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics * T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -50 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -2 A
P
C
Power Dissipation 0.5 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100μA, I
E
= 0 -50 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
= 0 -40 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100μA, I
C
= 0 -5 V
I
CEO
Collector Cut-off Current V
CE
= -35V, V
B
= 0 -0.1 μA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
= 0 -0.1 μA
h
FE
DC Current Gain V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
300
250
200
150
800
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -0.5A, I
B
= -5mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -50mA
-250
-350
-450
mV
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -1A, I
B
= -10mA -0.9 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -2V, I
C
= 1A -0.8 V
C
OB
Collector Output Capacitance V
CB
= -10V, I
E
= 0, f = 1MHz 20 pF
SOT-89
1
1. Base 2. Collector 3. Emitter
79 0
YWW
h
FE
Year code
Weekly code
Marking
