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VS-SD303C25S20C

P1-P3P4-P6P7-P9
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
4
Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
200 0
250 0
300 0
350 0
400 0
450 0
500 0
550 0
001011
N um b e r O f E q ua l Am p litud e H a lf C yc le C urr ent Puls es (N )
Peak Half Sine W ave Forward Current (A)
Initial T = 12 5°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
SD 30 3C ..C Series
10
100
1000
10000
01 23 45678
Insta nta neo us Fo rw a rd C urre n t (A )
Instantaneous Forward Voltage (V)
T = 25 °C
T = 125 ° C
J
J
SD 303C ..C Series
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Squ a re W a ve Pu lse D uratio n (s)
thJ-hs
Tran sient Therm al Impedance Z (K/W)
Stea dy State V alue
R = 0.1 6 K/W
(Sin gle Side C oole d)
R = 0.0 8 K/W
(Double Side C ooled)
(D C Ope ration )
thJ-hs
thJ-h s
SD 303 C ..C Se rie s
0
20
40
60
80
100
120
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
Rate O ff F all O f F orw a rd C urren t d i/d t (A/u se c)
T = 125°C
T = 25°C
J
J
SD 303C ..S20C Series
I
V
FP
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
5
Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
1.6
1.8
2
2.2
2.4
2.6
2.8
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD 303C ..S10C Serie s
T = 125 °C , V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0 20406080100
Maximum Reverse Recovery Charge - Qrr (µC)
Ra te O f Fall Of Forward Cu rrent - d i/dt (A /µs)
400 A
200 A
I = 750 A
Sq u a re P u l s e
FM
SD303C..S10C Series
T = 125 °C , V = 30V
J
r
20
30
40
50
60
70
80
90
100
20 30 40 5 0 60 70 80 90 10 0
M a xim um R ev erse Re cov ery C urren t - Irr (A )
Rate Of Fall Of Forwa rd Curren t - di/d t (A/µs)
400 A
200 A
I = 75 0 A
Square Pulse
FM
SD 303C..S10C Serie s
T = 1 2 5 °C , V = 3 0 V
r
J
1.6
2
2.4
2.8
3.2
3.6
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
M aximum Reverse Re cove ry Tim e - Trr (µs)
400 A
200 A
I = 75 0 A
Sq u a re P u ls e
FM
SD303C..S15C Series
T = 125 °C, V = 30V
r
J
50
60
70
80
90
100
110
120
130
140
150
160
170
10 20 30 40 50 60 70 80 90 100
M axim um Reverse Recovery Charge - Qrr (µC)
Ra te O f Fa ll O f Forw a rd Current - d i /d t (A /µs)
400 A
200 A
I = 75 0 A
Sq u a re P u ls e
FM
SD303C..S15C Series
T = 125 °C, V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 1 00
M a xim um R ev erse Re cov ery C u rre n t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 7 50 A
Sq u a re P u ls e
FM
SD 3 03C ..S15 C Se rie s
T = 125 °C, V = 30V
J
r
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Apr-14
6
Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
2.4
2.6
2.8
3
3.2
3.4
3.6
00101
Rate Of Fall Of Forwa rd Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD303C..S20C Series
T = 125 °C, V = 30V
J
r
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq ua re Pulse
FM
SD 3 03C ..S2 0C Se rie s
T = 1 2 5 ° C , V = 3 0 V
J
r
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 10 0
M a x im um Reve rse Rec o very C u rrent - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq uare Pulse
FM
SD303C ..S20C Series
T = 125 °C , V = 30V
J
r
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basewidth (µs)
Pea k Forward Current (A)
4
dv/d t = 1000V /µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD303C..S10C Seri es
T = 125°C, V = 1120V
J
RR M
tp
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basewidth (µs)
4
20 jou les p er pulse
10
0.4
0.2
Tr ape zo id al Pul se
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp
P1-P3P4-P6P7-P9

VS-SD303C25S20C

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Buy VS-SD303C25S20C
Manufacturer:
Vishay
Description:
Rectifiers 2500 Volt 350 Amp
Lifecycle:
New from this manufacturer.
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