SIR844DP-T1-GE3 Datasheet SIR844DP-T1-GE3 | P1-P3

Vishay Siliconix

SiR844DP

New Product

Document Number: 64810

S09-0875-Rev. A, 18-May-09

www.vishay.com

1

N-Channel 25-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• New MOSFET Technology Optimized for

Ringing Reduction in Switching Applications

• 100 % R

g

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Low-Side MOSFET

- Server, V

core

- DC/DC

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a

Q

g

(Typ.)

25

0.0028 at V

GS

= 10 V

50

a, g

29.5 nC

0.0038 at V

GS

= 4.5 V

50

a, g

Ordering Information: SiR844DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK

®

SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Based on T

C

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

25

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

50

a, g

A

T

C

= 70 °C

50

g

T

A

= 25 °C

30

b, c

T

A

= 70 °C

24

b, c

Pulsed Drain Current

I

DM

70

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

50

g

T

A

= 25 °C

4.5

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

40

Single Pulse Avalanche Energy

E

AS

80

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

50

W

T

C

= 70 °C

32

T

A

= 25 °C

5.0

b, c

T

A

= 70 °C

3.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

R

thJA

20 25

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

2.0 2.5

Vishay Siliconix

SiR844DP

www.vishay.com

2

Document Number: 64810

S09-0875-Rev. A, 18-May-09

New Product

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

25 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

20

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

- 5.6

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.0 2.6 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 25 V, V

GS

= 0 V

1

µA

V

DS

= 25 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 15 A

0.0022 0.0028

Ω

V

GS

= 4.5 V, I

D

= 10 A

0.0030 0.0038

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 15 A

50 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

3215

pFOutput Capacitance

C

oss

800

Reverse Transfer Capacitance

C

rss

475

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 10 V, I

D

= 10 A

60 90

nC

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 10 A

29.5 44

Gate-Source Charge

Q

gs

7.8

Gate-Drain Charge

Q

gd

9.7

Gate Resistance

R

g

f = 1 MHz 0.15 0.6 1.2 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 10 V, R

L

= 1 Ω

I

D

≅ 10 A, V

GEN

= 10 V, R

g

= 1 Ω

14 28

ns

Rise Time

t

r

918

Turn-Off Delay Time

t

d(off)

33 60

Fall Time

t

f

816

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 10 V, R

L

= 1 Ω

I

D

≅ 10 A, V

GEN

= 4.5 V, R

g

= 1 Ω

30 55

Rise Time

t

r

21 40

Turn-Off Delay Time

t

d(off)

39 75

Fall Time

t

f

18 35

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

50

A

Pulse Diode Forward Current

a

I

SM

70

Body Diode Voltage

V

SD

I

S

= 3 A

0.73 1.1 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

25 50 ns

Body Diode Reverse Recovery Charge

Q

rr

15 30 nC

Reverse Recovery Fall Time

t

a

13

ns

Reverse Recovery Rise Time

t

b

12

Document Number: 64810

S09-0875-Rev. A, 18-May-09

www.vishay.com

3

Vishay Siliconix

SiR844DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

14

28

42

56

70

0.0 0.5 1.0 1.5 2.0 2.5

V

GS

= 10 V thru 4 V

V

GS

=3V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

0.0015

0.0020

0.0025

0.0030

0.0035

0.0040

0 12243648 60

V

GS

=10V

V

GS

=4.5V

0

2

4

6

8

10

01326395265

I

D

=10A

V

DS

=15V

V

DS

=10V

V

DS

=5V

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

012345

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

C

rss

0

840

1680

2520

3360

4200

0 5 10 15 20 25

C

iss

C

oss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.9

1.2

1.5

1.8

- 50 - 25 0 25 50 75 100 125 150

I

D

=15A

V

GS

=4.5V

V

GS

=10V

T

J

-Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

SIR844DP-T1-GE3

SIR844DP-T1-GE3

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