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IRF6608

P1-P3P4-P6P7-P9
www.irf.com 1
3/31/04
IRF6608
HEXFET
®
Power MOSFET
Notes through are on page 2
DirectFET ISOMETRIC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ SX ST MQ MX MT
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
Description
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous
best thermal resistance by 80%.
The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in
synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been
optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in
the control FET socket.
V
DSS
R
DS(on)
max
Qg
30V
9.0mΩ@V
GS
= 10V
16nC
11mΩ@V
GS
= 4.5V
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
g
P
D
@T
A
= 70°C
Power Dissipation
g
W
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient
fj
––– 58
R
θJA
Junction-to-Ambient
gj
12.5 –––
R
θ
JA
Junction-to-Ambient
hj
20 ––– °C/W
R
θ
JC
Junction-to-Case
ij
––– 3.0
R
θ
J-PCB
Junction-to-PCB Mounted 1.0 –––
Max.
13
10
100
±12
30
55
-40 to + 150
2.1
0.017
1.4
42
PD - 94727B
IRF6608
2 www.irf.com
S
D
G
Notes:
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 29 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.0 9.0
mΩ
––– 8.0 11
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 30 µA
––– ––– 100
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 28 ––– ––– S
Q
g
Total Gate Charge ––– 16 24
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 4.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC
Q
gd
Gate-to-Drain Charge ––– 5.3 –––
Q
godr
Gate Charge Overdrive ––– 4.7 ––– See Fig. 16
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 6.7 –––
Q
oss
Output Charge ––– 11 ––– nC
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 16 ––– ns
t
f
Fall Time ––– 3.4 –––
C
iss
Input Capacitance ––– 2120 –––
C
oss
Output Capacitance ––– 440 ––– pF
C
rss
Reverse Transfer Capacitance ––– 260 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
yd
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Ener
g
y c
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 13
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 100
(Body Diode)
c
V
SD
Diode Forward Voltage ––– 0.94 1.2 V
t
rr
Reverse Recovery Time ––– 31 47 ns
Q
rr
Reverse Recovery Charge ––– 33 50 nC
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 8.8A
V
GS
= 0V
V
DS
= 15V
I
D
= 8.8A
54
T
J
= 25°C, I
F
= 8.8A
di/dt = 100A/µs e
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V e
showing the
integral reverse
p-n junction diode.
8.8
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A e
Max.
V
GS
= 4.5V, I
D
= 10A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
MOSFET symbol
Clamped Inductive Load
V
DS
= 15V, I
D
= 8.8A
Conditions
0.21
ƒ = 1.0MHz
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5Ve
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= 15V
V
GS
= 12V
V
GS
= -12V
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.38mH
R
G
= 25Ω, I
AS
= 8.8A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
IRF6608
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 12A
V
GS
= 10V
0.1 1.0 10.0 100.0
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
30µs PULSE WIDTH
Tj = 25°C
2.7V
VGS
TOP 10V
7.0V
4.5V
3.8V
3.5V
3.2V
2.9V
BOTTOM 2.7V
0.1 1.0 10.0 100.0
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
30µs PULSE WIDTH
Tj = 150°C
2.7V
VGS
TOP 10V
7.0V
4.5V
3.8V
3.5V
3.2V
2.9V
BOTTOM 2.7V
2.5 2.8 3.0 3.3 3.5
V
GS
, Gate-to-Source Voltage (V)
1.0
10.0
100.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 20V
30µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
010203040
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15V
I
D
= 8.8A
P1-P3P4-P6P7-P9

IRF6608

Mfr. #:
Buy IRF6608
Manufacturer:
Infineon / IR
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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