IRF6608
2 www.irf.com
S
D
G
Notes:
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 29 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.0 9.0
mΩ
––– 8.0 11
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 30 µA
––– ––– 100
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 28 ––– ––– S
Q
g
Total Gate Charge ––– 16 24
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 4.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC
Q
gd
Gate-to-Drain Charge ––– 5.3 –––
Q
godr
Gate Charge Overdrive ––– 4.7 ––– See Fig. 16
Q
sw
Switch Char
e (Q
gs2
+ Q
gd
)
––– 6.7 –––
Q
oss
Output Charge ––– 11 ––– nC
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 16 ––– ns
t
f
Fall Time ––– 3.4 –––
C
iss
Input Capacitance ––– 2120 –––
C
oss
Output Capacitance ––– 440 ––– pF
C
rss
Reverse Transfer Capacitance ––– 260 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
le Pulse Avalanche Ener
yd
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Ener
y c
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 13
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 100
(Body Diode)
c
V
SD
Diode Forward Voltage ––– 0.94 1.2 V
t
rr
Reverse Recovery Time ––– 31 47 ns
Q
rr
Reverse Recovery Charge ––– 33 50 nC
–––
V
GS
= 4.5V
Typ.
–––
–––
I
D
= 8.8A
V
GS
= 0V
V
DS
= 15V
I
D
= 8.8A
54
T
J
= 25°C, I
F
= 8.8A
di/dt = 100A/µs e
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V e
showing the
integral reverse
p-n junction diode.
8.8
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A e
Max.
V
GS
= 4.5V, I
D
= 10A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
MOSFET symbol
Clamped Inductive Load
V
DS
= 15V, I
D
= 8.8A
Conditions
0.21
ƒ = 1.0MHz
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5Ve
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= 15V
V
GS
= 12V
V
GS
= -12V
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.38mH
R
G
= 25Ω, I
AS
= 8.8A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.