LX5537
PRODUCTION DATA SHEET
Microsemi
Analog Mixed Signal Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
WWW.Microsemi .COM
InGaP HBT 2.3 – 2.7 GHz Power Amplifier
TM
®
Copyright © 2008
Rev. 1.0a, 2008-09-04
BLOCK DIAGRAM
Active Bias Network
Vref
RF
Input
RF
Output
Vc
Det
Active Bias Network
Vref
RF
Input
RF
Output
Vc
Det
3X3MM QFN PACKAGE PACKAGE ORDER INFO
LQ
Plastic QFN 3×3
16 pin
RoHS Compliant / Pb-free
LX5537LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5537LQ-TR)
DESCRIPTION
The LX5537 is a power amplifier
optimized for 802.16e(WiMAX/WiBro)
and 802.11b/g/n applications in the 2.3-
2.7 GHz frequency range. The PA is
implemented as a three-stage monolithic
microwave integrated circuit (MMIC)
with active bias, on-chip input matching
and output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). It operates with a single
positive voltage supply of 3-4.2V, and
provides power gain of 31dB and output
powers of +23.5dBm at 3.6V and +25
dBm at 4.2V for 2.5% EVM in the 2.5-
2.7GHz.
LX5537 also features an on-chip
power detector at the output port of
the PA to help reduce BOM cost and
PCB space for implementation of
power control in a typical wireless
system. The 26dB attenuation
function can optionally be used to
reach low gain mode.
The LX5537 is available in a 16-
pin 3mm x 3mm quad flat no lead
package (QFN 3×3-16L). The
compact footprint, low profile, and
excellent thermal capability make the
LX5537 an ideal solution for
WiMAX/WiBro as well as
802.11b/g/n applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.3-2.7GHz Operation
Single-Polarity 3-4.2V Supply
Power Gain ~ 31 dB or higher
23.5 dBm @2.5% EVM /3.6V
25 dBm @2.5% EVM /4.2V
24.5 dBm @4% EVM /3.6V
26 dBm @4% EVM /4.2V
22% Efficiency @24.5dBm/3.6V
Optional 26dB Attenuation
Complete On-Chip Input Match
Simple Output Match for
Optimal EVM
Temperature-Compensated
On-Chip Output Power Detector
with Wide Dynamic Range
Small Footprint: 3x3mm
2
Low Profile: 0.9mm
APPLICATIONS
802.16e WiMAX
802.16e WiBro
802.11b/g/n
L
L
X
X
5
5
5
5
3
3
7
7
MSC
5537
702
