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DSF01S30SL,L3F

P1-P3P4-P5
DSF01S30SL
1
Schottky Barrier Diode Silicon Epitaxial
DSF01S30SL
DSF01S30SL
DSF01S30SL
DSF01S30SL
Start of commercial production
2015-06
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) Low forward voltage: V
F
= 0.41 V (typ.) @ I
F
= 100 mA
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
SL2
1: Cathode
2: Anode
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Reverse voltage
Peak forward current
Average rectified current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
R
I
FM
I
O
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
30
200
100
2
125
-55 to 125
Unit
V
mA
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Pad dimension of 645 mm
2
.
Note 2: Measured with a 10 ms pulse.
2015-06-11
Rev.1.0
DSF01S30SL
2
5.
5.
5.
5. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V
F
I
R
C
t
Note Test Condition
I
F
= 10 mA
I
F
= 100 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.27
0.41
9.3
Max
0.3
0.5
7
50
Unit
V
µA
pF
6.
6.
6.
6. Marking
Marking
Marking
Marking
7.
7.
7.
7. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
8.
8.
8.
8. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
(Unit: mm)
(Unit: mm)
(Unit: mm)
(Unit: mm)
2015-06-11
Rev.1.0
DSF01S30SL
3
9.
9.
9.
9. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 9.1
9.1
9.1
9.1 I
I
I
I
F
F
F
F
- V
- V
- V
- V
F
F
F
F
Fig.
Fig.
Fig.
Fig. 9.2
9.2
9.2
9.2 I
I
I
I
R
R
R
R
- V
- V
- V
- V
R
R
R
R
Fig.
Fig.
Fig.
Fig. 9.3
9.3
9.3
9.3 C
C
C
C
t
t
t
t
- V
- V
- V
- V
R
R
R
R
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2015-06-11
Rev.1.0
P1-P3P4-P5

DSF01S30SL,L3F

Mfr. #:
Buy DSF01S30SL,L3F
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers Small Signal Schottky
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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