MC74VHC259
http://onsemi.com
4
MAXIMUM RATINGS (Note 1.)
Symbol
Parameter Value Unit
V
CC
Positive DC Supply Voltage --0.5to+7.0 V
V
IN
Digital Input Voltage --0.5to+7.0 V
V
OUT
DC Output Voltage --0.5toV
CC
+0.5 V
I
IK
Input Diode Current -- 2 0 mA
I
OK
Output Diode Current ±20 mA
I
OUT
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±75 mA
P
D
Power Dissipation in Still Air SOIC Package
TSSOP
200
180
mW
T
STG
Storage Temperature Range --65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 2.)
Machine Model (Note 3.)
Charged Device Model (Note 4.)
>2000
>200
>2000
V
I
LATCH--UP
Latch--Up Performance Above V
CC
and Below GND at 125°C(Note5.) ±300 mA
θ
JA
Thermal Resistance, Junction to Ambient SOIC Package
TSSOP
143
164
°C/W
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation s hould be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22--A114--A
3. Tested to EIA/JESD22--A115--A
4. Tested to JESD22--C101--A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage 0 V
CC
V
T
A
Operating Temperature Range, all Package Types -- 5 5 125 °C
t
r
,t
f
Input Rise or Fall Time V
CC
=3.3V+0.3 V
V
CC
=5.0V+0.5 V
0 20 ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
=80
C°
T
J
=90
C°
T
J
= 100 C°
T
J
=110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 5. Failure Rate vs. Time Junction Temperature