MBR3045CT, MBRB3035CT, MBRB3045CT
www.vishay.com
Vishay General Semiconductor
Revision: 17-Nov-17
1
Document Number: 88677
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
35 V, 45 V
I
FSM
200 A
V
F
0.60 V
T
J
max. 150 °C
Package TO-220AB, D
2
PAK (TO-263AB)
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR3045CT MBRB3045CT
MBRB3035CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
D
2
PAK (TO-263AB)
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB3035CT MBRB3045CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45
VWorking peak reverse voltage V
RWM
35 45
Maximum DC blocking voltage V
DC
35 45
Maximum average forward rectified current
total device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
200
Peak repetitive reverse current per diode at t
p
= 2.0 μs, 1 kHz I
RRM
2.0
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +150
°C
Storage temperature range T
STG
-65 to +175
