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MMBF5457LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4
1 Publication Order Number:
MMBF5457LT1/D
MMBF5457LT1
Preferred Device
JFET − General Purpose
Transistor
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
25 Vdc
Drain−Gate Voltage V
DG
25 Vdc
Reverse Gate−Source Voltage V
GS(r)
−25 Vdc
Gate Current I
G
10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
(T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
†
ORDERING INFORMATION
MMBF5457LT1 SOT−23 3000/Tape & Ree
l
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
1
2
3
2 SOURCE
3
GATE
1 DRAIN
1
6 M G
G
MMBF5457LT1G SOT−23
(Pb−Free)
3000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
6 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar ma
y
vary depending upon manufacturing location
.
MMBF5457LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= 10 mAdc, V
DS
= 0)
V
(BR)GSS
−25 − − Vdc
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
−
−
−
−
−1.0
−200
nAdc
Gate Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
V
GS(off)
−0.5 − −6.0 Vdc
Gate Source Voltage
(V
DS
= 15 Vdc, I
D
= 100 mAdc)
V
GS
− −2.5 − Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 2)
(V
DS
= 15 Vdc, V
GS
= 0)
I
DSS
1.0 − 5.0 mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Note 2)
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
|Y
fs
| 1000 − 5000
mmhos
Output Common Source Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
|y
os
| − 10 50
mmhos
Input Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
− 4.5 7.0 pF
Reverse Transfer Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
− 1.5 3.0 pF
2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
MMBF5457LT1
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Noise Figure versus Source
Resistance
V
DS
, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer
Characteristics
1.0
0.4
0.2
0
−1.2
0.8
0.6
0 5 10 15 20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
−0.8 −0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
V
DS
= 15 V
V
GS
= 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
V
GS(off)
^ −1.2 V
V
GS(off)
^ −1.2 V
R
S
, SOURCE RESISTANCE (Megohms)
14
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0
10
V
DS
= 15 V
V
GS
= 0
f = 1 kHz
P1-P3P4-P6

MMBF5457LT1G

Mfr. #:
Buy MMBF5457LT1G
Manufacturer:
ON Semiconductor
Description:
JFET 25V 10mA
Lifecycle:
New from this manufacturer.
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