OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9520-55,127

P1-P3P4-P6P7-P8
Philips Semiconductors Product specification
TrenchMOS transistor BUK9520-55
Logic level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using ’trench’V
DS
Drain-source voltage 55 V
technology.The device features very I
D
Drain current (DC) 52 A
low on-state resistance and has P
tot
Total power dissipation 116 W
integral zener diodes giving ESD T
j
Junction temperature 175 ˚C
protectionup to 2kV. It is intended for R
DS(ON)
Drain-source on-state 20 mΩ
use in automotive and general resistance V
GS
= 5 V
purpose switching applications.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
Drain-source voltage - - 55 V
V
DGR
Drain-gate voltage R
GS
= 20 kΩ -55V
±V
GS
Gate-source voltage - - 10 V
I
D
Drain current (DC) T
mb
= 25 ˚C - 52 A
I
D
Drain current (DC) T
mb
= 100 ˚C - 37 A
I
DM
Drain current (pulse peak value) T
mb
= 25 ˚C - 208 A
P
tot
Total power dissipation T
mb
= 25 ˚C - 116 W
T
stg
, T
j
Storage & operating temperature - - 55 175 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.29 K/W
mounting base
R
th j-a
Thermal resistance junction to in free air 60 - K/W
ambient
d
g
s
123
tab
April 1998 1 Rev 1.100
Philips Semiconductors Product specification
TrenchMOS transistor BUK9520-55
Logic level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA; 55 - - V
voltage T
j
= -55˚C 50 - - V
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 1 1.5 2 V
T
j
= 175˚C 0.5 - - V
T
j
= -55˚C - - 2.3
I
DSS
Zero gate voltage drain current V
DS
= 55 V; V
GS
= 0 V; - 0.05 10 µA
T
j
= 175˚C - - 500 µA
I
GSS
Gate source leakage current V
GS
= ±5 V; V
DS
= 0 V - 0.02 1 µA
T
j
= 175˚C - 10 µA
±V
(BR)GSS
Gate-source breakdown I
G
= ±1 mA; 10 - - V
voltage
R
DS(ON)
Drain-source on-state V
GS
= 5 V; I
D
= 25 A - 15 20 mΩ
resistance T
j
= 175˚C - - 42 mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
Forward transconductance V
DS
= 25 V; I
D
= 25 A 20 - - S
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 1800 2400 pF
C
oss
Output capacitance - 350 420 pF
C
rss
Feedback capacitance - 170 235 pF
t
d on
Turn-on delay time V
DD
= 30 V; I
D
= 25 A; - 28 40 ns
t
r
Turn-on rise time V
GS
= 5 V; R
G
= 10 Ω - 110 160 ns
t
d off
Turn-off delay time Resistive load - 95 135 ns
t
f
Turn-off fall time - 70 90 ns
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
s
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - 52 A
current
I
DRM
Pulsed reverse drain current - - 208 A
V
SD
Diode forward voltage I
F
= 25 A; V
GS
= 0 V - 0.95 1.2 V
I
F
= 40 A; V
GS
= 0 V - 1.0 -
t
rr
Reverse recovery time I
F
= 40 A; -dI
F
/dt = 100 A/µs; - 47 - ns
Q
rr
Reverse recovery charge V
GS
= -10 V; V
R
= 30 V - 0.15 - µC
April 1998 2 Rev 1.100
Philips Semiconductors Product specification
TrenchMOS transistor BUK9520-55
Logic level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive I
D
= 45 A; V
DD
≤ 25 V; - - 110 mJ
unclamped inductive turn-off V
GS
= 5 V; R
GS
= 50 Ω; T
mb
= 25 ˚C
energy
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0 20 40 60 80 100 120 140 160 180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100
1
10
100
1000
ID/A
VDS/V
RDS(ON) =VDS/ID
DC
tp =
1 us
10us
100 us
1 ms
10ms
100ms
0 20 40 60 80 100 120 140 160 180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-06 0.0001 0.01 1 100
0.001
0.01
0.1
1
10
D =
t
p
t
p
T
T
P
t
D
0.5
0.2
0.1
0.05
0.02
0
Zth/(K/W)
t/s
April 1998 3 Rev 1.100
P1-P3P4-P6P7-P8

BUK9520-55,127

Mfr. #:
Buy BUK9520-55,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 55V 52A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet