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DG419DY-E3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Vishay Siliconix
DG417, DG418, DG419
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
www.vishay.com
1
Precision CMOS Analog Switches
FEATURES
• ± 15 V analog signal range
• On-resistance - R
DS(on)
: 20
• Fast switching action - t
ON
: 100 ns
• Ultra low power requirements - P
D
: 35 nW
• TTL and CMOS compatible
• MiniDIP and SOIC packaging
• 44 V supply max. rating
• 44 V supply max. rating
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Wide dynamic range
• Low signal errors and distortion
• Break-before-make switching action
• Simple interfacing
• Reduced board space
• Improved reliability
APPLICATIONS
• Precision test equipment
• Precision instrumentation
• Battery powered systems
• Sample-and-hold circuits
• Military radios
• Guidance and control systems
• Hard disk drives
DESCRIPTION
The DG417, DG418, DG419 monolithic CMOS analog
switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417 series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
high voltage silicon gate (HVSG) process. Break-before-
make is guaranteed for the DG419, which is an SPDT
configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
Logic "0" 0.8 V
Logic "1" 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
1
Dual-In-Line and SOIC
S D
NC V-
GND
IN
V+ V
L
2
3
4
8
7
6
5
Top View
DG417
TRUTH TABLE
Logic DG417 DG418
0 ON OFF
1OFFON
1
Dual-In-Line and SOIC
D S
2
S
1
V-
GND
IN
V+ V
L
2
3
4
8
7
6
5
Top View
DG419
TRUTH TABLE DG419
Logic
SW
1
SW
2
0 ON OFF
1OFFON
www.vishay.com
2
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
Vishay Siliconix
DG417, DG418, DG419
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
DG417, DG418
- 40 °C to 85 °C
8-Pin Plastic MiniDIP
DG417DJ
DG417DJ-E3
DG418DJ
DG418DJ-E3
8-Pin Narrow SOIC
DG417DY
DG417DY-E3
DG417DY-T1
DG417DY-T1-E3
DG418DY
DG418DY-E3
DG418DY-T1
DG418DY-T1-E3
DG419
- 40 °C to 85 °C
8-Pin Plastic MiniDIP
DG419DJ
DG419DJ-E3
8-Pin Narrow SOIC
DG419DY
DG419DY-E3
DG419DY-T1
DG419DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter (Voltages referenced to V-) Limit Unit
V+ 44
V
GND 25
V
L
(GND - 0.3) to (V+) + 0.3
Digital Inputs
a
, V
S
, V
D
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current , (Any Terminal) Continuous 30
mA
Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle) 100
Storage Temperature
(AK Suffix) - 65 to 150
°C
(DJ, DY Suffix) - 65 to 125
Power Dissipation (Package)
b
8-Pin Plastic MiniDIP
c
400
mW
8-Pin Narrow SOIC
d
400
8-Pin CerDIP
e
600
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
www.vishay.com
3
Vishay Siliconix
DG417, DG418, DG419
SCHEMATIC DIAGRAM Typical Channel
Figure 1.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 - 15 15 V
Drain-Source
On-Resistance
R
DS(on)
I
S
= - 10 mA, V
D
= ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
20 35
45
35
45
Switch Off Leakage
Current
I
S(off)
V+ = 16.5, V- = - 16.5 V
V
D
= ± 15.5 V
V
S
= ± 15.5 V
Room
Full
- 0.1 - 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
nA
I
D(off)
DG417
DG418
Room
Full
- 0.1 - 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
DG419
Room
Full
- 0.1 - 0.75
- 60
0.75
60
- 0.75
- 12
0.75
12
Channel Off Leakage
Current
I
D(on)
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
= ± 15.5 V
DG417
DG418
Room
Full
- 0.4 - 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
DG419
Room
Full
- 0.4 - 0.75
- 60
0.75
60
- 0.75
- 12
0.75
12
Digital Control
Input Current V
IN
Low I
IL
Full 0.005 - 0.5 0.5 - 0.5 0.5
µA
Input Current V
IN
High I
IH
Full 0.005 - 0.5 0.5 - 0.5 0.5
Dynamic Characteristics
Tu r n - On T im e
t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= ± 10 V
See Switching Time
Tes t C ir c u i t
DG417
DG418
Room
Full
100 175
250
175
250
ns
Turn-Off Time
t
OFF
DG417
DG418
Room
Full
60 145
210
145
210
Transition Time
t
TRANS
R
L
= 300 , C
L
= 35 pF
V
S1
= ± 10 V, V
S2
= ± 10 V
DG419
Room
Full
175
250
175
250
Break-Before-Make
Time Delay (DG403)
t
D
R
L
= 300 , C
L
= 35 pF
V
S1
= V
S2
= ± 10 V
DG419 Room 13 5 5
Charge Injection Q
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Room 60 pC
Level
Shift/
Drive
V
IN
V
L
S
V+
GND
V-
D
V-
V+
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

DG419DY-E3

Mfr. #:
Buy DG419DY-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG419LEDY-T1-GE4
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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