ILQ1615-4

Document Number: 82582 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.7, 24-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Optocoupler, Phototransistor Output,
(Dual, Quad Channel), 110 °C Rated
ILD1615, ILQ1615
Vishay Semiconductors
DESCRIPTION
The ILD1615, ILQ1615 are multi-channel 110 °C rated
phototransistor optocouplers that use GaAs IRLED emiters
and high gain NPN phototransistors. These devices are
constructed using over/under leadframe optical coupling
and double molded insulation technology resulting a
withstand test voltage of 7500 V
AC PEAK
and a working
voltage of 1700 V
RMS
.
The binned min./max. and linear CTR characteristics make
these devices well suited for DC or AC voltage detection.
Eliminating the phototransistor base connection provides
added electrical noise immunity from the transients found in
many industrial control environments.
Because of guaranteed maximum non-saturated and
saturated switching characteristics, the ILD1615, ILQ1615
can be used in medium speed data I/O and control systems.
The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and
switching applications. Interfacing with a CMOS logic is
enhanced by the guaranteed CTR at I
F
= 1.0 mA.
FEATURES
Operating temperature from
- 55 °C to + 110 °C
Identical channel to channel footprint
Dual and quad packages feature:
- Reduced board space
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
Isolation test voltage, 5300 V
RMS
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code H, double protection
CSA 93751
BSI IEC 60950; IEC 60065
DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
i179015-1
Dual Channel
Quad Channel
ORDERING INFORMATION
ILx1615-4
PART NUMBER
x = D (Dual) or Q (Quad)
CTR
BIN
AGENCY CERTIFIED/PACKAGE
DUAL CHANNEL QUAD CHANNEL
CTR (%)
UL, CSA, BSI 160 to 320 160 to 320
DIP-8 ILD1615-4 -
DIP-16 - ILQ1615-4
7.62 mm
DIP-#
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 82582
2 Rev. 1.7, 24-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1615, ILQ1615
Vishay Semiconductors
Optocoupler, Phototransistor Output,
(Dual, Quad Channel), 110 °C Rated
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to wave profile for soldering conditions for through hole devices.
Note
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
1.5 A
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.0 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter collector breakdown voltage BV
ECO
7.0 V
Collector current
I
C
50 mA
t < 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Derate linearly from 25 °C 1.5 mW/°C
COUPLER
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 110 °C
Soldering temperature
(1)
2.0 mm distance from case bottom T
sld
260 °C
Package power dissipation ILD1615 400 mW
Derate linearly from 25 °C 5.33 mW/°C
Package power dissipation ILQ1615 500 mW
Derate linearly from 25 °C 6.67 mW/°C
Isolation test voltage t = 1.0 s V
ISO
5300 V
RMS
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.0 1.15 1.3 V
Breakdown voltage I
R
= 10 μA V
BR
6.0 30 V
Reverse current V
R
= 6.0 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
25 pF
OUTPUT
Collector emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector emitter leakage current V
CE
= 10 V I
CEO
5.0 100 nA
Collector emitter breakdown voltage I
CE
= 0.5 mA BV
CEO
70 V
Emitter collector breakdown voltage I
E
= 0.1 mA BV
ECO
7.0 V
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match I
F
= 10 mA, V
CE
= 5.0 V CTRX/CTRY 1 to 1 2 to 1
COUPLER
Capacitance (input to output) V
IO
= 0 V, f = 1.0 MHz C
IO
0.8 pF
Insulation resistance V
IO
= 500 V, T
A
= 25 °C R
S
10
12
10
14
Channel to channel isolation 500 V
AC
Document Number: 82582 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.7, 24-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ILD1615, ILQ1615
Optocoupler, Phototransistor Output,
(Dual, Quad Channel), 110 °C Rated
Vishay Semiconductors
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio
(collector emitter saturated)
I
F
= 1.0 mA, V
CE
= 0.4 V
ILD1615-4
CTR
CEsat
100 %
ILQ1615-4
Current transfer ratio
(collector emitter)
I
F
= 10 mA, V
CE
= 5.0 V
ILD1615-4
CTR
CE
160 200 320 %
ILQ1615-4
I
F
= 1.0 mA, V
CE
= 5.0 V
ILD1615-4
CTR
CE
56 90 %
ILQ1615-4
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Turn-on time
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 ,
50 % of V
PP
t
on
3.0 μs
Rise time
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 ,
50 % of V
PP
t
r
2.0 μs
Turn-off time
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 ,
50 % of V
PP
t
off
2.3 μs
Fall time
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 ,
50 % of V
PP
t
f
2.0 μs
Propagation H to L
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 ,
50 % of V
PP
t
PHL
1.1 μs
Propagation L to H
I
F
= 10 mA, V
CC
= 5.0 V, R
L
= 75 ,
50 % of V
PP
t
PLH
2.5 μs
SATURATED
Turn-on time
I
F
= 5.0 mA, V
CC
= 5.0 V, R
L
= 1.0 k,
V
HT
= 1.5 V
t
on
6.0 μs
Rise time
I
F
= 5.0 mA, V
CC
= 5.0 V, R
L
= 1.0 k,
V
HT
= 1.5 V
t
r
4.6 μs
Turn-off time
I
F
= 5.0 mA, V
CC
= 5.0 V, R
L
= 1.0 k,
V
HT
= 1.5 V
t
off
25 μs
Fall time
I
F
= 5.0 mA, V
CC
= 5.0 V, R
L
= 1.0 k,
V
HT
= 1.5 V
t
f
15 μs
Propagation H to L
I
F
= 5.0 mA, V
CC
= 5.0 V, R
L
= 1.0 k,
V
HT
= 1.5 V
t
PHL
5.4 μs
Propagation L to H
I
F
= 5.0 mA, V
CC
= 5.0 V, R
L
= 1.0 k,
V
HT
= 1.5 V
t
PLH
7.4 μs
COMMON MODE TRANSIENT IMMUNITY (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Common mode rejection output high V
CM
= 50 V
P-P
, R
L
= 1.0 k, I
F
= 0 mA CM
H
5000 V/μs
Common mode rejection output low V
CM
= 50 V
P-P
, R
L
= 1.0 k, I
F
= 10 mA CM
L
5000 V/μs
Common mode coupling capacitance C
CM
0.01 pF

ILQ1615-4

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Quad CTR > 160-320%
Lifecycle:
New from this manufacturer.
Delivery:
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