NL17SG126DFT2G

© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
1 Publication Order Number:
NL17SG126/D
NL17SG126
Bus Buffer with 3-State
Output
The NL17SG126 MiniGatet is an advanced high−speed CMOS
Bus Buffer with 3−State Output in ultra−small footprint.
The NL17SG126 input structures provides protection when
voltages up to 4.6 V are applied.
Features
Wide Operating V
CC
Range: 0.9 V to 3.6 V
High Speed: t
PD
= 2.3 ns (Typ) at V
CC
= 3.0 V, C
L
= 15 pF
Low Power Dissipation: I
CC
= 0.5 mA (Max) at T
A
= 25°C
4.6 V Overvoltage Tolerant (OVT) Input Pins
Ultra−Small Packages
These are Pb−Free and Halide−Free Devices
Figure 1. SOT−953
(Top Thru View)
V
CC
OE
IN A
GND OUT Y
Figure 2. SC−88A
(Top View)
1
2
3
5
4
Figure 3. UDFN6
(Top View)
1
2
3
6
5
4
OE
A
GND
NC
V
CC
OUT Y
V
CC
OE
IN A
OUT Y
GND
1
2
3
5
4
Figure 4. Logic Symbol
IN A
OUT Y
EN
OE
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ORDERING INFORMATION
See detailed ordering and shipping information on page 7 o
f
this data sheet.
MARKING
DIAGRAMS
SOT−953
CASE 527AE
J = Specific Device Code
(J with 90 degree clockwise rotation)
M = Month Code
M
1
FUNCTION TABLE
X
L
H
A Input Y Output
Z
L
H
OE Input
L
H
H
J
UDFN6
1.0 x 1.0
CASE 517BX
1
M
UDFN6
1.45 x 1.0
CASE 517AQ
1
M
SC−88A
DF SUFFIX
CASE 419A
A5 M G
G
M
Q
E
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
PIN ASSIGNMENT
1
2
3OE
IN A
GND
4
5V
CC
OUT Y
6
SOT−953 SC−88A UDFN6
IN A
GND
V
CC
GND
OE
IN A
V
CC
OUT Y
GND
OE
IN A
NC
OUT Y
V
CC
NL17SG126
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +5.5 V
V
IN
DC Input Voltage −0.5 to +4.6 V
V
OUT
DC Output Voltage −0.5 to V
CC
+0.5 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND −20 mA
I
OUT
DC Output Source/Sink Current ±20 mA
I
CC
DC Supply Current per Supply Pin ±20 mA
I
GND
DC Ground Current per Ground Pin ±20 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
>2000
>100
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) ±100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
Positive DC Supply Voltage 0.9 3.6 V
V
IN
Digital Input Voltage 0.0 3.6 V
V
OUT
Output Voltage Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
0.0
0.0
V
CC
3.6
V
T
A
Operating Temperature Range −55 +125 °C
Dt / DV
Input Transition Rise or Fail Rate V
CC
= 3.3 V ± 0.3 V 0 10 ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NL17SG126
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions V
CC
(V)
T
A
= 255C
T
A
=
−555C to +1255C
Min Max Min Max
Unit
V
IH
High−Level
Input
Voltage
0.9 V
CC
V
CC
V
1.1 to 1.3 0.7xV
CC
0.7xV
CC
1.4 to 1.6 0.65xV
CC
0.65xV
CC
1.65 to 1.95 0.65xV
CC
0.65xV
CC
2.3 to 2.7 1.7 1.7
3.0 to 3.6 2.0 2.0
V
IL
Low−Level Input
Voltage
0.9 GND GND
V
1.1 to 1.3 0.3xV
CC
0.3xV
CC
1.4 to 1.6 0.35xV
CC
0.35xV
CC
1.65 to 1.95 0.35xV
CC
0.35xV
CC
2.3 to 2.7 0.7 0.7
3.0 to 3.6 0.8 0.8
V
OH
High−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OH
= −20 mA
0.9 0.75 0.75
V
I
OH
= −0.3 mA 1.1 to 1.3 0.75xV
CC
0.75xV
CC
I
OH
= −1.7 mA 1.4 to 1.6 0.75xV
CC
0.75xV
CC
I
OH
= −3.0 mA
1.65 to 1.95 V
CC
−0.45
V
CC
−0.4
5
I
OH
= −4.0 mA 2.3 to 2.7 2.07 2.07
I
OH
= −8.0 mA 3.0 to 3.6 2.75 2.75
V
OL
Low−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OL
= 20 mA
0.9 0.1 0.1
V
I
OL
= 0.3 mA 1.1 to 1.3 0.25xV
CC
0.25xV
CC
I
OL
= 1.7 mA 1.4 to 1.6 0.25xV
CC
0.25xV
CC
I
OL
= 3.0 mA 1.65 to 1.95 0.45 0.45
I
OL
= 4.0 mA 2.3 to 2.7 0.4 0.4
I
OL
= 8.0 mA 3.0 to 3.6 0.4 0.4
I
IN
Input Leakage
Current
0 V
IN
3.6 V 0 to 3.6 $0.1 $1.0
mA
I
CC
Quiescent
Supply Current
V
IN
= V
CC
or GND 3.6 1.0 10.0
mA
I
OZ
3−State Output
Leakage
Current
V
IN
= V
IH
or V
IL
V
OUT
= 0 to 3.6 V
0.9 to 3.6 1.0 10.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NL17SG126DFT2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers BUS BUFFER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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