Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15659EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
NPN SILICON RF TRANSISTOR
NE678M04 / 2SC5753
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
• 8 mm wide embossed taping
NE678M04-T2-A
2SC5753-T2-A
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Collector to Base Voltage
Collector to Emitter Voltage
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB