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2SC5753-T2-A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15659EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
NPN SILICON RF TRANSISTOR
NE678M04 / 2SC5753
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE678M04-A
2SC5753-A
50 pcs (Non reel)
• 8 mm wide embossed taping
NE678M04-T2-A
2SC5753-T2-A
3 kpcs/reel
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
9.0
Collector to Emitter Voltage
VCEO
6.0
Emitter to Base Voltage
VEBO
2.0
Collector Current
IC
100
Total Power Dissipation
Ptot
Note
205
Junction Temperature
Tj
150
Storage Temperature
Tstg
65 to +150
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Data Sheet P15659EJ1V0DS
2
NE678M04 / 2SC5753
THERMAL RESISTANCE
Parameter
Symbol
Value
Junction to Ambient Resistance
Rth j-a
Note
600
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
100
nA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 30 mA
75
120
150
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
12.0
GHz
Insertion Power Gain
S21e
2
VCE = 3 V, IC = 30 mA, f = 2 GHz
8.0
10.5
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 2 GHz,
ZS = Zopt
1.7
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
0.42
0.7
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 3 V, IC = 30 mA, f = 2 GHz
13.5
dB
Linear Gain
GL
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 5 dBm
13.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
18.0
dBm
Collector Efficiency
C
VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
55
%
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
hFE CLASSIFICATION
Rank
FB
Marking
R55
hFE Value
75 to 150
(K – (K
2
– 1) )
S21
S12
Data Sheet P15659EJ1V0DS
3
NE678M04 / 2SC5753
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

2SC5753-T2-A

Mfr. #:
Buy 2SC5753-T2-A
Manufacturer:
CEL
Description:
Bipolar Transistors - BJT NPN High Frequency
Lifecycle:
New from this manufacturer.
Delivery:
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