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STL12N60M2

P1-P3P4-P6P7-P9P10-P12P13-P15
STL12N60M2
Electrical characteristics
DocID027900 Rev 1
7/15
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
T
j
(°C)
I
D
= 250 µA
V
GS(th)
1.00
0.90
0.80
0.70
-50 0
(norm)
1.10
50 100
AM03184v1
Test circuits
STL12N60M2
8/15
DocID027900 Rev 1
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STL12N60M2
Package information
DocID027900 Rev 1
9/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
P1-P3P4-P6P7-P9P10-P12P13-P15

STL12N60M2

Mfr. #:
Buy STL12N60M2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package
Lifecycle:
New from this manufacturer.
Delivery:
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